WATANABE Masahito | Fundamental Research Laboratories, NEC Corporation

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概要

• 同名の論文著者
• Fundamental Research Laboratories, NEC Corporationの論文著者

関連著者

• HIBIYA Taketoshi

  Fundamental Research Laboratories, NEC Corporation

• WATANABE Masahito

  Fundamental Research Laboratories, NEC Corporation

• Hibiya T

  Fundamental Research Laboratories Nec Corporation

• Hibiya Taketoshi

  Fundamental Research Laboratories Nec Corporation

• Watanabe M

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Watanabe Mahiko

  Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University

• Eguchi Minoru

  Fundamental Research Laboratories Nec Corporation

• 渡辺 正裕

  東京工業大学大学院総合理工学研究科

• Wang W

  National Laboratory Of Solid State Microstructure And Department Of Physics Nanjing University

• Watanabe M

  Nec Corp. Ibaraki Jpn

• Kakimoto Koichi

  Institute Of Advanced Material Study Kyushu University

• Wang W

  National Tainan Teachers Coll. Tainan Twn

• WANG Wei

  Fundamental Research Laboratories, NEC Corporation

• Wang Wei

  National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University

• EGUCHI Minoru

  Fundamental Research Laboratories, NEC Corporation

• TANAHASHI Takahiko

  Faculty of Science and Technology, Keio University

• Yi Kyung-woo

  School Of Materials Science And Engineering Seoul National University

• Yi Kyung-woo

  Fundamental Research Laboratories Nec Corporation

• Tanahashi T

  Faculty Of Science And Technology Keio University

• Tanahashi Takahiko

  Faculty Of Science And Technology Keio University

• KAKIMOTO Koichi

  Fundamental Research Laboratories, NEC Corporation

• Tanahashi Takahiko

  Faculty Of Engineering Keio University

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著作論文

• Control of Oxygen-Atom Transport in Silicon Melt during Crystal Growth by Electromagnetic Force
• Three-Dimensional Simulation of Silicon Melt Flow in Electromagnetic Czochralski Crystal Growth
• Silicon Crystal Growth by the Electromagnetic Czochralski (EMCZ) Method
• Modification of Heat and Mass Transfers and Their Effect on the Crystal-Melt Interface Shape of Si Single Crystal during Czochralski Crystal Growth
• Change in Velocity in Silicon Melt of the Czochralski (CZ) Process in a Vertical Magnetic Field

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