Modification of Heat and Mass Transfers and Their Effect on the Crystal-Melt Interface Shape of Si Single Crystal during Czochralski Crystal Growth
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概要
- 論文の詳細を見る
The modification of heat transfer in molten silicon during Czochralski (CZ) crystal growth is discussed by focusing on the transition of the flow mode from axisymmetric to nonaxisymmetric, in order to clarify the mechanism of crystal-melt interface shape deformation. Heat transfer in silicon melt is observed by measuring the difference in temperature near the crucible wall and at the crystal-melt interface with simultaneous observation of molten silicon flow. We confirm that the heat transfer coefficient of silicon melt is reduced when the flow mode is changed from axisymmetric to non-axisymmetric. The crystal-melt interface shape changed as a result of the modified heat transfer, which is due to the flow mode transition from axisymmetric to non-axisymmetric.
- 社団法人応用物理学会の論文
- 1997-10-15
著者
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HIBIYA Taketoshi
Fundamental Research Laboratories, NEC Corporation
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Watanabe Mahiko
Department Of Applied Physics And Chemistry Faculty Of Engineering Hiroshima University
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Kakimoto Koichi
Institute Of Advanced Material Study Kyushu University
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WATANABE Masahito
Fundamental Research Laboratories, NEC Corporation
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Hibiya T
Fundamental Research Laboratories Nec Corporation
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Eguchi Minoru
Fundamental Research Laboratories Nec Corporation
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Hibiya Taketoshi
Fundamental Research Laboratories Nec Corporation
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