Clustering Parameter and Internal Stress in III-V Ternary Alloys

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概要

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• An application of laser Raman Spectroscopy to estimate the clustering parameters and internal stress accumulated in each bond in Ga_<0.5>Al_<0.5>As, Ga__<0.52>In__<0.48>P, Ga_<1-x>In_xAs (0⪯x⪯0.53), and GaAs_<0.7>P<0.3> is proposed. The clustering parameters and stress are evaluated from the phonon intensity and the difference between the observed optical phonon frequencies and those calculated in terms of the modified RED model, respectively. The estimated values of the clustering parameter agree fairly well with those obtained from theoretical calculation of the excess free energy of mixing. Thebond lengths in Ga_<1-xIn_xAs (0⪯x⪯0.53) are derived from the stress, and are compared with published data on extended X-ray absorption fine structure.

• 社団法人応用物理学会の論文
• 1985-08-20

著者

• Kakimoto Koichi

  Institute Of Advanced Material Study Kyushu University

• Kakimoto Koichi

  Institute Of Interdisciplinary Research Faculty Of Engineering The University Of Tokyo

• Katoda Takashi

  Institute Of Interdisciplinary Research Faculty Of Engineering The University Of Tokyo

関連論文

• Characterization of Precipitates in Anodic Oxidized Ga_Al_xAs and Ga_In_xAs by Laser Raman Spectroscopy
• Size of Crystalline Particle in Si-Implanted GaAs Estimated by Laser Raman Spectroscopy
• An Analysis of Natural Convection with Radiation from the Free Surface of the Fluid in a Vertical Cylinder
• Modification of Heat and Mass Transfers and Their Effect on the Crystal-Melt Interface Shape of Si Single Crystal during Czochralski Crystal Growth
• Change in Velocity in Silicon Melt of the Czochralski (CZ) Process in a Vertical Magnetic Field
• Clustering Parameter and Internal Stress in III-V Ternary Alloys

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