Size of Crystalline Particle in Si-Implanted GaAs Estimated by Laser Raman Spectroscopy

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概要

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• The dependence of the peak intensity, full-width at half maximum (FWHM), and peak frequency of the LO phonon in Si implanted GaAs on the dose of Si and on the depth were studied by laser Raman spectroscopy. Raman spectra from almost crystalline particles were observed in all the samples that Si was implanted into at a current fluence between 2 and 400 nA cm^<-2> even if the dose is as large as 1×10^<16> cm^<-2>. The minimum size of the crystalline particle can be estimated to be about 45〜50 Å. The size and density of the crystalline particles kept the minimum size and a constant value, respectively, from the surface to a depth of about 0.15 μm in spite of an increase in the intensity of a disorder-activated spectra.

• 社団法人応用物理学会の論文
• 1984-08-20

著者

• Katoda Takashi

  Institute Of Interdisciplinary Research Faculty Of Engineering The University Of Tokyo

• Nakamura Tomoji

  Institute Of Interdisciplinary Research Faculty Of Engineering The University Of Tokyo:(present Addr

関連論文

• Characterization of Precipitates in Anodic Oxidized Ga_Al_xAs and Ga_In_xAs by Laser Raman Spectroscopy
• Size of Crystalline Particle in Si-Implanted GaAs Estimated by Laser Raman Spectroscopy
• Clustering Parameter and Internal Stress in III-V Ternary Alloys

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