Properties of Metal-Semiconductor Field-Effect Transistors Fabricated on Carbon-Doped Semi-Insulating GaAs Crystal Grown by Liquid Encapsulated Czochralski Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-09-15
著者
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Watanabe M
Hiroshima Univ. Higashi‐hiroshima Jpn
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OTOKI Yoohei
Advanced Research Center, Hitachi Cable, Ltd.
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WATANABE Masatoshi
Advanced Research Center, Hitachi Cable, Ltd.
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KUMA Shoji
Advanced Research Center, Hitachi Cable, Ltd.
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TAKAHASHI Susumu
Advanced Research Center, Hitachi Cable, Ltd.
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ONISHI Masaya
Hitaka Works, Hitachi Cattle, Ltd.
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KASHIWA Mikio
Hitaka Works, Hitachi Cattle, Ltd.
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Kuma S
Advanced Research Center Hitachi Cable Ltd.
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Kuma Shoji
Advanced Research Center Hitachi Cable Ltd.
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Otoki Yoohei
Advanced Research Center Hitachi Cable Ltd.
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Kashiwa Mikio
Hitaka Works Hitachi Cattle Ltd.
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Onishi Masaya
Hitaka Works Hitachi Cattle Ltd.
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Takahashi Susumu
Advance Product Research Laboratory Technical Research Institute Toppan Printing Co. Ltd.
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