Measurement of Abrupt Change of Carrier Concentration by C-V Method
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概要
- 論文の詳細を見る
Depth profiles of semiconductor wafers with abrupt change of carrier concentration are generally shown to be dull by C-V measurement. A new method of analysis of profile measurement considering changes of internal potential (E_g-E_F) is proposed. Using this analysis, abrupt profiles of a GaAs epitaxial wafer and a Si-ion-implanted GaAs wafer are successfully obtained.
- 社団法人応用物理学会の論文
- 1993-08-15
著者
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KUMA Shoji
Advanced Research Center, Hitachi Cable, Ltd.
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Sasaki Yoshitaka
The Furukawa Electric Co. Ltd.
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Kuma Shoji
Advanced Research Center Hitachi Cable Ltd.
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Sasaki Y
The Furukawa Electric Co. Ltd.
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SAKAGUCHI Harunori
Advanced Research Center, Hitachi Cable. Ltd.
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SASAKI Yukio
Advanced Research Center, Hitachi Cable, Ltd.
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Sakaguchi H
Hitachi Cable Ltd. Ibaraki Jpn
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Sakaguchi Harunori
Advanced Research Center Hitachi Cable Ltd.
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