Mechanism of Carrier Accumulation at the Hetero Interface between InSb and GaAs

概要

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Various surface orientations of GaAs were used as substrates for InSb epitaxial growth, and the dependence of the interface carrier density on substrate surface indexes was discovered. The interface carrier density increased in proportion to the dangling bond density at the hetero epitaxial interface, and carrier accumulation was significantly suppressed using a (111) substrate which had the least dangling bond density among all the surface indexes of a zinc-blende structure. A carrier accumulation model based on the estimated band diagrams at the hetero junction was proposed and well explained these experimental results.
社団法人応用物理学会の論文
1999-02-28