Single and Double δ-Doped Al_<0.25>Ga_<0.75>As/In_<0.25>Ga_<0.75>As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy

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Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
Structural and Chemical State Analysis of the Heat-Treated Au/GaSb(110) Interface by Means of Angle-Resolved X-Ray Photoelectron Spectroscopy (ARXPS)
High-Performance HEMT with an Offset-Gate Structure for Millimeter-Wave Monolithic Microwave ICs
Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates
Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In_Al_As/In_Ga_As/InAsP High-Electron-Mobility Structures on GaAs Substrates
Dry Etching Damage and Activation Ratio Degradation in δ-Doped AlGaAs/InGaAs High Electron Mobility Transistors
Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid
High-Performance In_Al_As/In_Ga_As High Electron Mobility Transistors on GaAs
Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTs
Chemical State Analysis of Silicon-Oxygen Compounds : CHEMICAL APPLICATIONS
Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
Reduction of Schottky Reverse Leakage Current Using GaAs Surface Cleaning with UVO_3 Treatment
Fabrication of InAlAs/InGaAs High-Electron-Mobility Transistors Using ArF-Excimer-Laser-Assisted Damage-Free Highly Selective InGaAs/InAlAs Etching
Linearity Study on Enhance/Depletion Dual-Gate High Electron Mobility Transitors using Gain Mapping Method
Single Voltage Supply High Efficiency InGaAs Pseudomorphic Double-Hetero HEMTs with Platinum Buried Gates
1.45 μm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
Improved Electron Mobility of AlInSb/InAsSb/AlInSb Heterostructures Grown Lattice-Mismatched on GaAs Substrates
Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
Estimation of Low-Energy Ion Bombardment Damage on GaAs(001) Surface by X-Ray Photoelectron Diffraction
Experimental and Theoretical Two-Dimensional X-Ray Photoelectron Diffraction Patterns from GaAs(001) Surface
Direct Atomic Site Determination of Foreign Atoms in a Crystal Surface Layer by X-Ray Photoelectron Diffraction
Estimation of Surface Crystal Regularity by Utilizing X-Ray Photoelectron Diffraction (XPED) Effects
Quantitative XPS Measurement on the Surfaces of GaP, GaSb and ZnSe Single Crystals
Quantitative X-Ray Photoelectron Spectroscopic (XPS) Measurement on the Surfaces of GaAs(111), (111) and (110) Single Crystals : Determination of Relative Photo-Auger Ionization Cross Sections and Electron Mean Free Paths by Using the Crystal Regularity o
Angular Denendence of XPS Intensities from GaAs (110) Surface : PHOTOEMISSION (MAINLY UPS AND XPS)
Applying a Mode Selector to Improve the Pulse-Compression Performance of Asymmetric-Coupled-Waveguide-Based Dispersion Compensators
Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure
Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. : II. Experiment
High Breakdown Voltage InAlAs/InGaAs High Electron Mobility Transistors on GaAs with Wide Recess Structure
Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of AlGaAs/GaAs Heterojunction Bipolar Transistors
Mechanism of Carrier Accumulation at the Hetero Interface between InSb and GaAs
Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates
Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing
X-ray photoelectron diffraction (XPED) studies on metal oxide surfaces. I. Analysis of the XPED patterns from TiO2(001) and .ALPHA.-Al2O3(0001) by the single scattering calculation.
Angle-Resolved X-Ray Photoelectron Spectroscopy (ARXPS) as a New Tool for Solid Surface Characterization

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