Sakaguchi Harunori | Advanced Research Center Hitachi Cable Ltd.
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概要
関連著者
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Sakaguchi Harunori
Advanced Research Center Hitachi Cable Ltd.
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SAKAGUCHI Harunori
Advanced Research Center, Hitachi Cable. Ltd.
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Sakaguchi H
Hitachi Cable Ltd. Ibaraki Jpn
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KITA Takashi
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University
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Kita T
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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NISHINO Taneo
Department of Electrical and Electronics Engineering, Kobe University
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NISHINO Taneo
Institute of Natural Science, Kobe University
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NAKAYAMA Hiroshi
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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KANATA Takashi
Department of Physics, Faculty of Science, Kwansei Gakuin University
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Kita T
Institute Of Natural Science Kobe University
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Nishino Taneo
Department Of Electrical And Electronics Engineering Kobe University
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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Nishino Taneo
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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KUMA Shoji
Advanced Research Center, Hitachi Cable, Ltd.
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Washima Mineo
Advanced Research Center Hitachi Cable Ltd.
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Sasaki Yoshitaka
The Furukawa Electric Co. Ltd.
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Kuma Shoji
Advanced Research Center Hitachi Cable Ltd.
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Kanata Takashi
Department Of Physics Faculty Of Science Kwansei Gakuin University
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Sasaki Y
The Furukawa Electric Co. Ltd.
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SASAKI Yukio
Advanced Research Center, Hitachi Cable, Ltd.
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Kita T
Kobe Univ. Kobe Jpn
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Nishino T
Kobe Univ. Kobe Jpn
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TANAKA Takeshi
Advanced Research Center, Hitachi Cable Ltd.
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Nakayama Hiroshi
Department Of Electrical Engineering Faculty Of Engineering Himeji Institute Of Technology
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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Tanaka Takeshi
Advanced Research Center Hitachi Cable Ltd.
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Nakayama Hiroshi
Department of Applied Physics, Osaka City University, Osaka 558-8585
著作論文
- Photoluminescence and Photoreflectance Study of Electronic Structure in Pseudomorphic n-AlGaAs/InGaAs/GaAs
- Measurement of Abrupt Change of Carrier Concentration by C-V Method
- Mechanism of Carrier Accumulation at the Hetero Interface between InSb and GaAs