Nishino Taneo | Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa

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著作論文

Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
LPE Growth of InGa_xP_As_on GaAs Substrate by Two-Phase Melt Method.
Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
Characterization of Thermally-Induced Defects in CZ-Si by Room-Temperature Photoluminescence
Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
Photoluminescence Characterization of Polycrystalline Si for Solar Cells : I-3: CHARACTERIZATION OF SOLAR CELLS
Rapid Characterization of Solar Cell Performances : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
Deep Impurity Levels in InP LEC Crystals
Bound Multiexciton Luminescence in Lithium-Doped Silicon
Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
Oxygen-Related Donors Generated at 800℃ in CZ-Si
Bandgap Energy of InGaAsP Quaternary Alloy
Preparation and Properties of InGaAsP p-n Junction for Fabrication of Photodetectors in Optical Communication Systems : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
Observation of Deep Impurity Levels in In_GA_As_P_
Bound Multiexciton Luminescence in Boron-Doped Silicon: Excitation-Level Dependence and Recombination Kinetics
Temperature and Impurity-Concentration Dependence of the Exciton Two-Electron Luminescence from Phosphorus-Doped Silicon
Differential Photovoltage Spectra of Au-GaAs_P_x Schottky-Barrier Diodes
Lineshape Morphology in Modulation Spectroscopy (Selected Topics in Semiconductor Physics) -- (Modulation Spectroscopy)
Optical Absorption Edge of Layer Compound InS Grown from In Melt
Spin polarization of exciton luminescence from ordered Ga0.5In0.5P
Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_Ga_)_In_P and GaAs Heterointerface
Theoretical Analysis of Photoacoustic Displacement for Inhomogeneous Materials
A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe : Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors
Photoluminescence and Photoreflectance Study of Electronic Structure in Pseudomorphic n-AlGaAs/InGaAs/GaAs
Higher-interband electroreflectance of long-range ordered Ga0.5In0.5P
Photoluminescence from metastable states in long-range ordered (Al0.5Ga0.5)0.51In0.49P
Inelastic phonon scattering in long-range-ordered (Al0.5Ga0.5)0.5In0.5P
Direct optical transitions in indirect-gap (Al0.5Ga0.5)0.51In0.49P by atomic ordering
Resonant coupling between confined and unconfined states in a finite-period In0.24Ga0.76As/GaAs strained-layer superlattice
On the Bound-Exciton Luminescence from Highly Doped Silicon
Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy
Thermal and Electric Field Broadening in Electro-Optical Effect
Electroreflectance in GaAs near the Fundamental Edge at 25°K

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