On the Bound-Exciton Luminescence from Highly Doped Silicon
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概要
- 論文の詳細を見る
We report some new features on the broad bound-excitccn luminescence bandobserved in highly doped silicon. This band has been attributed previously to radiativerecombination from multiple excitons bound to an isolated neutral impurity center. Itsspectral position, however, shifts significantly with increase in the impurity con-centration toward lower-energy side. This result cannot be explained by the multiplebound-exciton model but rather suggests the existence of more complicated exciton-impurity complexes.
- 社団法人日本物理学会の論文
- 1977-11-15
著者
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HAMAKAWA Yoshihiro
Faculty of Engineering Science, Osaka University
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NISHINO Taneo
Institute of Natural Science, Kobe University
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NISHINO Taneo
Faculty of Engineering Science, Osaka University
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NAKAYAMA Hiroshi
Faculty of Engineering Science, Osaka University
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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Nishino Taneo
Faculty Of Engineering Kobe University
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
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Nishino T
Kobe Univ. Kobe Jpn
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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Nakayama Hiroshi
Faculty Of Engineering Himeji Institute Of Technology
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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