Bound Multiexciton Luminescence in Boron-Doped Silicon: Excitation-Level Dependence and Recombination Kinetics
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概要
- 論文の詳細を見る
Low-temperature ltuninescence associated with botmd mtmltiexciton complexesin boron-doped silicon has been investigated with emphasis on the excitation-leveldependence of the luminescence spectra. In order to interpret the experimentalresults, we have proposed a model for the formation and decay processes ofbound multiexciton complexes. It has been found that the excitation-level depend-once of the bound multiexciton luminescence in boron-doped silicon is consistentwith the excitation behavior calculated from the rate equations based on themodel for the recombination kinetics of botmd multiexciton complexes.
- 社団法人日本物理学会の論文
- 1979-02-15
著者
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HAMAKAWA Yoshihiro
Faculty of Engineering Science, Osaka University
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Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
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NISHINO Taneo
Institute of Natural Science, Kobe University
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NISHINO Taneo
Faculty of Engineering Science, Osaka University
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NAKAYAMA Hiroshi
Faculty of Engineering Science, Osaka University
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OHNISHI Ken-ichi
Faculty of Engineering Science,Osaka University
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SAWADA Hirotoshi
Faculty of Engineering Science,Osaka University
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Nishino Taneo
Department Of Electrical And Electronics Engineering Kobe University
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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Nishino Taneo
Faculty Of Engineering Kobe University
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Ohnishi Ken-ichi
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
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Nishino T
Kobe Univ. Kobe Jpn
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Sawada Hirotoshi
Faculty Of Engineering Science Osaka University
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Nakayama Hiroshi
Faculty Of Engineering Himeji Institute Of Technology
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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