Electroreflectance and Photoluminescence Studies of In_<1-x>Ga_xP_<1-y>As_y Lattice-Matched to GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-03-20
著者
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Kondo Masafumi
Central Research Laboratories Charp Corporation
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HAMAKAWA Yoshihiro
Faculty of Engineering Science, Osaka University
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Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
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SHIRAKATA Sho
Faculty of Engineering Science, Osaka University
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KONDO Masahiko
Faculty of Engineering Science, Osaka University
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NISHINO Taneo
Faculty of Engineering Science, Osaka University
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Nishino T
Mie Univ. Tsu Jpn
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Nishino Taneo
Faculty Of Engineering Kobe University
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Kondo Masaki
Optical-device Laboratories Sharp Corporation
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Kondo M
Research Initiative For Thin Film Silicon Solar Cells National Institute Of Advanced Industrial Scie
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Kondo M
National Inst. Advanced Ind. Sci. And Technol. (aist) Ibaraki Jpn
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Hamakawa Yoshihiro
Faculty Of Engineering Science Osaka University
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Shirakata Sho
Faculty Of Engineering Ehime University
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
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Kondo Masahiko
Faculty Of Agriculture Shimane University
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- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Characterization of Thermally-Induced Defects in CZ-Si by Room-Temperature Photoluminescence
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