Bound Multiexciton Luminescence in Lithium-Doped Silicon
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概要
- 論文の詳細を見る
The bouutd xmultjexcitoxt ]untiuvesce?tce of ]ithit?uva-dojved silicott has bea?t inves-tigated to test the tnodel for the fo?'ntatioua autd decay jcrocesses of bouxcd tcculti-exciton coxavplexes which we propsed previously for auaalysis of the bot?ndmultiexciton lu?ctinescence in boron-doped silicon. Tlve results show tltat tlaeexcitatjout-level depetmdettce of the bottmad nau]tiexeito?v Iunci?tesce?tce liaves js alsowell explaixted by rate equatio?ts based UPOII thc model. From the ataalysis wehave obtaiu?ed the excitoxt cajcture and Auger recombittatio?t rates for bouttdmultjexcitoxc comjclexes jtr ]ithium.-doped sjlicon. The decay curves of the bouxadmultiexcitoxa [uutaistes<xerace lix?es have be,exc also calcvulatecl, the results indicatiumgsome characteristic features seett in the previously reported data.
- 社団法人日本物理学会の論文
- 1980-09-15
著者
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HAMAKAWA Yoshihiro
Faculty of Engineering Science, Osaka University
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Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
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NISHINO Taneo
Institute of Natural Science, Kobe University
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NISHINO Taneo
Faculty of Engineering Science, Osaka University
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NAKAYAMA Hiroshi
Faculty of Engineering Science, Osaka University
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OHNISHI Ken-ichi
Faculty of Engineering Science,Osaka University
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Nishino Taneo
Department Of Electrical And Electronics Engineering Kobe University
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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Nishino Taneo
Faculty Of Engineering Kobe University
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Ohnishi Ken-ichi
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Faculty Of Engineering Osaka University
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Nishino T
Kobe Univ. Kobe Jpn
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Nakayama Hiroshi
Faculty Of Engineering Himeji Institute Of Technology
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Nishino Taneo
Division Of Science And Materials The Graduate School Of Science And Technology Kobe University:depa
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