Interface Stress at OMVPE-Grown ZnS_xSe_<1-x>/GaAs:Cr Heterostructure : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
The interface stress at OMVPE-grown ZnS_xSe_<1-x>/GaAs:Cr (x=0.03〜0.14) heterostructures has been investigated using the Cr-related photoluminescence line at 0.839 eV from GaAs substrates. From analysis of the shift of the Cr-related luminescence line, it has been found that the GaAs substrates at the heterointerface suffer compressive stress almost independent of the composition of ZnS_xSe_<1-x> epitaxial layers. Such compressive stress at the GaAs substrates can be explained as being due to the difference between the thermal expansion coefficients of ZnS_xSe<1-x> and GaAs; the thermal stress introduced in cooling from the growth temperature (500℃) of ZnS_xSe_<1-x> on GaAs.
- 社団法人応用物理学会の論文
- 1988-04-20
著者
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Fujita S
Department Of Electronic Science And Engineering Kyoto University
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Hamakawa Y
Ritsumeikan Univ. Shiga Jpn
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Fujita S
Hachinohe Inst. Technol. Aomori Jpn
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Nishino Taneo
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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Hamakawa Y
Faculty Of Science And Engineering Ritsumeikan University
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Sakamoto Takao
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Tonami Yoshiyuki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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