Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illimination-Collection Mode
スポンサーリンク
概要
- 論文の詳細を見る
- 2001-01-15
著者
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KAWAKAMI Yoichi
Department of Electrical Engineering Kyoto University
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FUJITA Shigeo
Department of Electrical Engineering Kyoto University
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Fujita Shigeo
Department Of Electronic Science And Engineering Kyoto University
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Fujita Shigeo
Department Of Applied Physics And Physico-informatics Keio University
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Okamoto K
Department Of Electronic Science And Engineering Kyoto University
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Okamoto Koichi
Deparment Of Neurology Gunma University School Of Medicine
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KANETA Akio
Department of Electronic Science and Engineering, Kyoto University
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IZUMI Tomoaki
Department of Electronic Science and Engineering, Kyoto University
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NARITA Yoshihito
Spectroscopic Division, JASCO Corporation
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INOUE Tsutomu
Spectroscopic Division, JASCO Corporation
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MUKAI Takashi
Department of Research and Development, Nichia Chemical Industries Ltd.
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Kawakami Yoichi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Mukai Takashi
Department Of Nitride Semiconductor Research Laboratory Optoelectronics Products Division Nichia Cor
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Kaneta Akio
Department Of Electronic Science And Engineering Kyoto University
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Izumi Tomoaki
Department Of Electronic Science And Engineering Kyoto University
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Narita Yoshihito
Spectroscopic Division Jasco Corporation
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Mukai Takashi
Department Of Research And Development Nichia Chemical Industries Ltd.
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Inoue Tsutomu
Spectroscopic Division Jasco Corporation
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