Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2006-07-25

著者

• KAWAKAMI Yoichi

  Department of Electrical Engineering Kyoto University

• MUKAI Takashi

  Nitride Semiconductor Research Laboratory, Nichia Corporation

• Mukai Takashi

  Kyoto Univ. Kyoto Jpn

• Takahashi Masayoshi

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Mukai Takashi

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Narukawa Yukio

  Kyoto Univ. Kyoto Jpn

• Narukawa Yukio

  Nitride Semiconductor Research Laboratory Nichia Corporation

• UEDA Masaya

  Department of Electronic Science and Engineering, Kyoto University

• Kawakami Yoichi

  Department Of Electrical Engineering Faculty Of Engineering Osaka University

• Mukai Takashi

  Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.

• Matsushita Toshio

  Department Of Research And Development Nichia Chemical Industries Ltd

• FUNATO Mitsuru

  Department of Electronic Science and Engineering, Kyoto University

• Ueda Masaya

  Department Of Electronic Science And Engineering Kyoto University

• Funato Mitsuru

  Department Of Electronic Science And Engineering Kyoto University

• KOSUGI Takao

  Nitride Semiconductor Research Laboratory, Nichia Corporation

• Kosugi Takao

  Nitride Semiconductor Research Laboratory Nichia Corporation

関連論文

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• On the Properties of ZnSe/(NH_4)_2S_x-Pretreated GaAs Heterointerfaces
• Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy
• Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn_Cd_ySe/ZnS_xSe_
• Growth of Short-Period ZnSe-ZnS_xSe_ Strained-Layer Superlattices by Metalorganic Molecular Beam Epitaxy
• Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System
• Effects of (NH_4)_2S_x-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBE
• Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy
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• Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
• Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illimination-Collection Mode
• Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
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