Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-03-01

著者

• Mukai T

  Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.

• MUKAI Takashi

  Nitride Semiconductor Research Laboratory, Nichia Corporation

• Mukai Takashi

  Kyoto Univ. Kyoto Jpn

• Takahashi Masayoshi

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Mukai Takashi

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Mukai Takashi

  Department Of Research And Development; Nichia Chemical Industries Ltd.

• Narukawa Yukio

  Kyoto Univ. Kyoto Jpn

• Narukawa Yukio

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Mukai Takashi

  Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.

• Mukai Takashi

  Nichia Corp. Tokushima Jpn

• Matsushita Toshio

  Department Of Research And Development Nichia Chemical Industries Ltd

• Yamada Motokazu

  Department Of Nitride Semiconductor Research Laboratory Optoelectronics Products Division Nichia Cor

• YAMADA Motokazu

  Advanced LED Development Center, Optoelectronics Products Division, Nichia Corporation

• NARUKAWA Yukio

  Advanced LED Development Center, Nichia Corporation

• Yamada Motokazu

  Advanced Led Development Center Optoelectronics Products Division Nichia Corporation

関連論文

• Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
• Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
• 510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
• High-Power Pure Blue InGaN Laser Diodes
• Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
• High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
• Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
• InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
• InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
• InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• Si-Doped InGaN Films Grown on GaN Films
• P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
• Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
• Hole Compensation Mechanism of P-Type GaN Films
• Thermal Annealing Effects on P-Type Mg-Doped GaN Films
• High-Power GaN P-N Junction Blue-Light-Emitting Diodes
• Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
• Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes
• Study of GaN-based Laser Diodes in Near Ultraviolet Region(Semiconductors)
• Wavelength Dependence of InGaN Laser Diode Characteristics
• Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H Films
• Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
• Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
• Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
• Ultra-High Efficiency White Light Emitting Diodes
• Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
• Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
• Red-Enhanced White-Light-Emitting Diode Using a New Red Phosphor
• A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
• InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
• Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
• Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
• CW Operation of the First-Order AlInGaN 405nm Distributed Feedback Laser Diodes
• 365nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
• High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
• Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
• Ultraviolet GaN Single Quantum Well Laser Diodes
• High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
• InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
• Velocity of Sound in and Elastic Properties of Cs_2O-B_2O_3 Glasses
• Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm
• Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
• Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates
• Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate
• Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
• Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
• Ultra-High Efficiency White Light Emitting Diodes
• Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage
• Red-Enhanced White-Light-Emitting Diode Using a New Red Phosphor
• Dislocation Reduction Mechanism in Low-Nucleation-Density GaN Growth Using AlN Templates
• Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage
• Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
• 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
• Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
• Wavelength Dependence of InGaN Laser Diode Characteristics
• Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes

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