Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature

スポンサーリンク

概要

• 論文の詳細を見る

• We realized room-temperature lasing of blue and green GaN-based vertical-cavity surface-emitting lasers (VCSELs), for the first time, by current injection. The blue GaN-based VCSEL had a threshold current of 1.5 mA and a threshold voltage of 3.3 V under continuous-wave operation. Its maximum output power was 0.70 mW and its laser emission wavelength was 451 nm. The green GaN-based VCSEL had a threshold current of 22 mA and a threshold voltage of 6.3 V under pulsed current operation. Its maximum output power was estimated to be over 0.80 mW and the laser emission wavelength was 503 nm.

• 2011-07-25

著者

• Mukai Takashi

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Morita Daisuke

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Higuchi Yu

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Kosugi Takao

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Nakagawa Kyosuke

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Matsumura Hiroaki

  Nitride Semiconductor Research Laboratory Nichia Corporation

• KAWAMATA Jun

  Nitride Semiconductor Research Laboratory, Nichia Corporation

• Kasahara Daiji

  Nitride Semiconductor Research Laboratory, Nichia Corporation, Anan, Tokushima 774-8601, Japan

関連論文

• Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
• 510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
• Ultra-High Efficiency White Light Emitting Diodes
• Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
• Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
• A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
• InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
• Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
• Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
• High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
• Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
• Ultraviolet GaN Single Quantum Well Laser Diodes
• Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm
• Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
• Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates
• Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate
• Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
• Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
• Ultra-High Efficiency White Light Emitting Diodes
• Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage
• Dislocation Reduction Mechanism in Low-Nucleation-Density GaN Growth Using AlN Templates
• Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage
• Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
• 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
• Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
• Wavelength Dependence of InGaN Laser Diode Characteristics
• Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes

もっと見る 閉じる

スポンサーリンク