Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes

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概要

• 論文の詳細を見る

• Ultraviolet (UV) light-emitting diode (LED) epilayers were grown on low dislocation density ($1\times 10^{8}$/cm2) GaN templates with sapphire substrates. Then, the GaN templates and sapphire substrates were removed using laser-induced lift-off and polishing techniques. Additionally, to enhance the extraction efficiency, this LED chip used a higher reflectance Ag p-type electrode, patterned surface, and silicone resin molding package. When this UV LED was operated at a forward-bias pulsed current of 1 A at room temperature, the peak wavelength, output power, forward voltage, and external quantum efficiency were 365 nm, 1.5 W, 4.4 V, and 44%, respectively.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-09-15

著者

• Mukai Takashi

  Nitride Semiconductor Research Laboratory Nichia Corporation

• YAMAMOTO Masashi

  Nitride Semiconductor Research Laboratory, Nichia Corporation

• YASUTOMO Katsuhiro

  Nitride Semiconductor Research Laboratory, Nichia Corporation

• Kasai Yoshio

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Matoba Kousuke

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Morita Daisuke

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Sano Masahiko

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Akaishi Kazuyuki

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Nagahama Shin-ichi

  Nitride Semiconductor Research Laboratory Nichia Corporation

• Mukai Takashi

  Nitride Semiconductor Research Laboratory, Nichia Corporation 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Nagahama Shin-ichi

  Nitride Semiconductor Research Laboratory, Nichia Corporation 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Yamamoto Masashi

  Nitride Semiconductor Research Laboratory, Nichia Corporation 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Kasai Yoshio

  Nitride Semiconductor Research Laboratory, Nichia Corporation 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Akaishi Kazuyuki

  Nitride Semiconductor Research Laboratory, Nichia Corporation 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Sano Masahiko

  Nitride Semiconductor Research Laboratory, Nichia Corporation 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Matoba Kousuke

  Nitride Semiconductor Research Laboratory, Nichia Corporation 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Yasutomo Katsuhiro

  Nitride Semiconductor Research Laboratory, Nichia Corporation 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

関連論文

• Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
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• Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes
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• Optical Gain Spectra of a (0001) InGaN Green Laser Diode
• Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
• Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
• Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
• Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
• Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates (電子部品・材料)

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