InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-12-15
著者
-
Mukai T
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
-
MUKAI Takashi
Department of Research and Development, Nichia Chemical Industries Ltd.
-
Mukai Takashi
Kyoto Univ. Kyoto Jpn
-
Takahashi Masayoshi
Nitride Semiconductor Research Laboratory Nichia Corporation
-
Mukai Takashi
Nitride Semiconductor Research Laboratory Nichia Corporation
-
Mukai Takashi
Department Of Research And Development; Nichia Chemical Industries Ltd.
-
NARUKAWA Yukio
Department of Electronic Science and Engineering, Kyoto University
-
Narukawa Yukio
Kyoto Univ. Kyoto Jpn
-
Narukawa Yukio
Nitride Semiconductor Research Laboratory Nichia Corporation
-
Narukawa Yukio
Department Of Electronic Science And Engineering Kyoto University
-
SANO Masahiko
Department of Research and Development, Nichia Chemical Industries, Ltd.
-
Mukai Takashi
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
-
Mukai Takashi
Nichia Corp. Tokushima Jpn
-
Matsushita Toshio
Department Of Research And Development Nichia Chemical Industries Ltd
-
Mukai Takashi
Department Of Nitride Semiconductor Research Laboratory Optoelectronics Products Division Nichia Cor
-
Yamada Motokazu
Department Of Nitride Semiconductor Research Laboratory Optoelectronics Products Division Nichia Cor
-
Sano Masahiko
Department Of Nitride Semiconductor Research Laboratory Nichia Corporation
-
YAMADA Motokazu
Advanced LED Development Center, Optoelectronics Products Division, Nichia Corporation
-
MITANI Tomotsugu
Advanced LED Development Center, Nichia Corporation
-
SHIOJI Shuji
Advanced LED Development Center, Nichia Corporation
-
NIKI Isamu
Department of Nitride Semiconductor Research Laboratory, Nichia Corporation
-
SONOBE Shinya
Advanced LED Development Center, Nichia Corporation
-
DEGUCHI Kouichiro
Advanced LED Development Center, Nichia Corporation
-
Niki Isamu
Department Of Nitride Semiconductor Research Laboratory Nichia Corporation
-
Shioji Shuji
Advanced Led Development Center Nichia Corporation
-
Sonobe Shinya
Advanced Led Development Center Nichia Corporation
-
Mitani Tomotsugu
Advanced Led Development Center Nichia Corporation
-
Yamada Motokazu
Advanced Led Development Center Optoelectronics Products Division Nichia Corporation
-
Deguchi Kouichiro
Light Emitting Diode Front-end Engineering Department Nichia Corporation
-
Deguchi Kouichiro
Advanced Led Development Center Nichia Corporation
関連論文
- Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illimination-Collection Mode
- Experimental and Theoretical Considerations of Polarization Field Direction in Semipolar InGaN/GaN Quantum Wells
- 510-515nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate
- High-Power Pure Blue InGaN Laser Diodes
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
- Time-Resolved Photoluminescence Study of Strain-Induced Quantum Dots Self-Formed in GaP/InP Short-Period Superlattice
- High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
- InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
- InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
- Si-Doped InGaN Films Grown on GaN Films
- P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
- Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
- Hole Compensation Mechanism of P-Type GaN Films
- Thermal Annealing Effects on P-Type Mg-Doped GaN Films
- High-Power GaN P-N Junction Blue-Light-Emitting Diodes
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
- Watt-Class High-Output-Power 365nm Ultraviolet Light-Emitting Diodes
- Study of GaN-based Laser Diodes in Near Ultraviolet Region(Semiconductors)
- Wavelength Dependence of InGaN Laser Diode Characteristics
- Evaluation of Band-Gap Energies and Characterization of Nonradiative Recombination Centers of Film and Bulk GaN Crystals
- Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H Films
- Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
- Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
- Ultra-High Efficiency White Light Emitting Diodes
- Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
- Red-Enhanced White-Light-Emitting Diode Using a New Red Phosphor
- A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
- Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
- Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
- Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- CW Operation of the First-Order AlInGaN 405nm Distributed Feedback Laser Diodes
- 365nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
- High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
- Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
- Ultraviolet GaN Single Quantum Well Laser Diodes
- High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
- InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
- Velocity of Sound in and Elastic Properties of Cs_2O-B_2O_3 Glasses
- Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450nm
- Monolithic Polychromatic Light-Emitting Diodes Based on InGaN Microfacet Quantum Wells toward Tailor-Made Solid-State Lighting
- Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates
- Temperature Dependence of the Thermal Conductivity and Phonon Scattering Time of a Bulk GaN Crystal
- Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate
- Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
- High-Quality InGaN Films Grown on GaN Films
- Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
- Ultra-High Efficiency White Light Emitting Diodes
- Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage
- Red-Enhanced White-Light-Emitting Diode Using a New Red Phosphor
- Dislocation Reduction Mechanism in Low-Nucleation-Density GaN Growth Using AlN Templates
- Enhancement-Mode AlGaN/AlN/GaN High Electron Mobility Transistor with Low On-State Resistance and High Breakdown Voltage
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
- 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
- Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy
- Wavelength Dependence of InGaN Laser Diode Characteristics
- Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes