Mukai Takashi | Department Of Nitride Semiconductor Research Laboratory Optoelectronics Products Division Nichia Cor

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著作論文

Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illimination-Collection Mode
High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
Si-Doped InGaN Films Grown on GaN Films
P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
Red-Enhanced White-Light-Emitting Diode Using a New Red Phosphor
A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
Temperature Dependence of the Thermal Conductivity and Phonon Scattering Time of a Bulk GaN Crystal
High-Quality InGaN Films Grown on GaN Films
Red-Enhanced White-Light-Emitting Diode Using a New Red Phosphor

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