Red-Enhanced White-Light-Emitting Diode Using a New Red Phosphor
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-01-15
著者
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MUKAI Takashi
Department of Research and Development, Nichia Chemical Industries Ltd.
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Mukai Takashi
Department Of Nitride Semiconductor Research Laboratory Optoelectronics Products Division Nichia Cor
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Yamada M
Advanced Led Development Center Optoelectronics Products Division Nichia Corporation
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YAMADA Motokazu
Advanced LED Development Center, Optoelectronics Products Division, Nichia Corporation
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NAITOU Takahiro
Advanced LED Development Center, Optoelectronics Products Division, Nichia Corporation
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IZUNO Kunihiro
Advanced LED Development Center, Optoelectronics Products Division, Nichia Corporation
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TAMAKI Hiroto
R & D Department, Phosphors and Finechemicals Division, Nichia Corporation
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MURAZAKI Yoshinori
R & D Department, Phosphors and Finechemicals Division, Nichia Corporation
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KAMESHIMA Masatoshi
R & D Department, Phosphors and Finechemicals Division, Nichia Corporation
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Tamaki Hiroto
R & D Department Phosphors And Finechemicals Division Nichia Corporation
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Izuno Kunihiro
Advanced Led Development Center Optoelectronics Products Division Nichia Corporation
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Naitou Takahiro
Advanced Led Development Center Optoelectronics Products Division Nichia Corporation
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Izuno Kunihiro
Advanced Led Development Center Nichia Corporation
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Yamada Motokazu
Advanced Led Development Center Optoelectronics Products Division Nichia Corporation
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Murazaki Yoshinori
R & D Department Phosphors And Finechemicals Division Nichia Corporation
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Kameshima Masatoshi
R & D Department Phosphors And Finechemicals Division Nichia Corporation
関連論文
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- High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
- Si-Doped InGaN Films Grown on GaN Films
- P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
- Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
- Evaluation of Band-Gap Energies and Characterization of Nonradiative Recombination Centers of Film and Bulk GaN Crystals
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
- Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
- Red-Enhanced White-Light-Emitting Diode Using a New Red Phosphor
- A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
- Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
- Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
- Comparison of Optical Properties in GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
- High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
- Temperature Dependence of the Thermal Conductivity and Phonon Scattering Time of a Bulk GaN Crystal
- High-Quality InGaN Films Grown on GaN Films
- Red-Enhanced White-Light-Emitting Diode Using a New Red Phosphor