Evaluation of Band-Gap Energies and Characterization of Nonradiative Recombination Centers of Film and Bulk GaN Crystals

元データ 2003-08-15 Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

著者

岡本 徹 東大理
HARAGUCHI Masanobu Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
OKAMOTO Toshihiro Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
FUKUI Masuo Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
MUKAI Takashi Department of Research and Development, Nichia Chemical Industries Ltd.
Fukui Masuo Department Of Electrical And Electronic Engineering Faculty Of Engineering The University Of Tokushi
KAMANO Masaru Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
KUWAHARA Minoru Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
SHINOMIYA Genichi Department of Research and Development, Nichia Chemical Industries, Ltd.
Kuwahara M Department Of Comparative Pathophysiology Graduate School Of Agricultural And Life Science The Unive
Mukai T Department Of Animal Science School Of Veterinary Medicine And Animal Sciences Kitasato University
Kamano Masaru Nichia Corporation
Okamoto T Department Of Agricultural Chemistry Faculty Of Agriculture Kinki University
Haraguchi Masanobu Department Of Electrical And Electronic Engineering Faculty Of Engineering The University Of Tokushi
Kamano Masaru Department Of Optical Science And Technology Faculty Of Engineering The University Of Tokushima
Shinomiya G Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

関連論文

▼もっと見る