Sano Masahiko | Department Of Nitride Semiconductor Research Laboratory Nichia Corporation

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著作論文

Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

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