NAGAHAMA Shin-ichi | Department of Research and Development, Nichia Chemical Industries, Ltd.

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概要

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著作論文

High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
Cd-Doped InGaN Films Grown on GaN Films
High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

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