Mukai T | Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.

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概要

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著作論文

High-Power Pure Blue InGaN Laser Diodes
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Si-Doped InGaN Films Grown on GaN Films
P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
Hole Compensation Mechanism of P-Type GaN Films
Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H Films
Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
A Methodological Study of the Best Solution for Generating White Light Using Nitride-Based Light-Emitting Diodes(Lasers, Quantum Electronics)
InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors
Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip : Semiconductors
Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
High Output Power 365nm Ultraviolet Light Emitting Diode of GaN-Free Structure : Semiconductors
Characteristics of Ultraviolet Laser Diodes Composed of Quaternary Al_xIn_yGa_N : Semiconductors
High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

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