Harima H | Department Of Electronics And Information Science Kyoto Institute Of Technology
スポンサーリンク
概要
関連著者
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HARIMA Hiroshi
Department of Electronics and Information Science, Kyoto Institute of Technology
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Harima H
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Harima Hiroshi
Department Of Applied Physics Osaha University
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橘 邦英
愛媛大学大学院工学研究科電子情報工学専攻
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Tachibana Kunihide
Department of Electronic Science and Engineering, Kyoto University
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Tachibana Kunihide
Department Of Electronic Science And Engineering Kyoto University
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Ohnishi H
Institute For Chemical Research Kyoto University
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Ohnishi Hiroshi
Manufacturing Engineering Center Mitsubishi Electric Corporation
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Ohnishi Hiroshi
Manufacturing Development Laboratory Mitsubishi Electric Corp.
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Abe Hajime
Department of Cardiology, Sakakibara Heart Institute
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Abe Hajime
Department Of Applied Physics Graduate School Of Engineering Osaka University
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NAKASHIMA Shin-ichi
Department of Applied Physics,Osaka University
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KOBAYASHI Minoru
Manufacturing Development Laboratory, Mitsubishi Electric Corp.
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HOSHINOUCHI Susumu
Manufacturing Development Laboratory, Mitsubishi Electric Corp.
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Abe H
Semiconductor Technology Development Group Semiconductor Solutions Network Company Sony Corporation
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Hoshinouchi Susumu
Manufacturing Development Laboratory Mitsubishi Electric Co.
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Nakashima S
Ntt Telecommunications Energy Lab. Atsugi Jpn
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Nakashima Shin-ichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Kobayashi M
Tokai Univ. Kanagawa Jpn
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KOBAYASHI Minoru
Manufacturing Development Laboratory, Mitsubishi Electric Co.
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阿部 良夫
Department Of Materials Science Kitami Institute Of Technology
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KIMURA Kozo
Optoelectronics Joint Research Laboratory
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Tokuda Y
Mitsubishi Electric Corp. Hyogo Jpn
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Tokuda Yasunori
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tokuda Yasunori
Central Research Laboratory Mitsubishi Electric Corporation
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ISHINO Kenei
Faculty of Engineering, Shizuoka University
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FUJIYASU Hiroshi
Faculty of Engineering, Shizuoka University
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Mukai T
Nitride Semiconductor Research Laboratory Opto-electronics Products Division Nichia Corp.
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Kanamoto K
Mitsubishi Electric Corp. Hyogo Jpn
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Kanamoto Kyozo
Femtosecond Technology Research Association (festa)
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Fujiyasu Hiroshi
Faculty Of Engineering Shizuoka University
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Fujiyasu Hiroshi
Department Of Electronics Faculty Of Engineering Shizuoka University
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Mukai Takashi
Department Of Research And Development; Nichia Chemical Industries Ltd.
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YAO Takafumi
Institute for Materials Research, Tohoku University
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Abe Y
Mitsubishi Electric Corp. Hyogo Jpn
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Yao Takafumi
Institute For Materials Research Tohoku University
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Ishino Kenei
Faculty Of Engineering Shizuoka University
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SAKAKIBARA Shingo
Yamaha Corporation
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ISHIDA Akihiro
Faculty of Engineering, Shizuoka University
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Saisho Tetsuhiro
Faculty of Engineering, Shizuoka University
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Tanoue Fumiyasu
Yamaha Corporation
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Chen Yefan
Institute for Materials Research, Tohoku University
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Mukai Takashi
Nichia Corp. Tokushima Jpn
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Takeuchi Yasunori
Kek National Laboratory For High Energy Physics
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Sakai Kiyomi
Kansai Advanced Research Center Communications Research Laboratory The Ministry Of Posts And Telecom
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Ishida Akihiro
Faculty Of Engineering Shizuoka University
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Hanaoka Ken-ichi
Department of Electronics and Information Science, Kyoto Institute of Technology
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GOTO Yoshiyuki
Manufacturing Development Laboratory, Mitsubishi Electric Co.
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MUKAI Takuya
Department of Electronics and Information Science, Kyoto Institute of Technology
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KUSAKABE Yoshihiko
Manufacturing Development Laboratory, Mitsubishi Electric Corp.
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Takeuchi Y
Institute For Materials Research Tohoku University
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Sakai K
宮崎大
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Chen Yefan
Institute For Materials Research Tohoku University
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Mukai Takuya
Department Of Electronics And Information Science Faculty Of Engineering And Desigh Kyoto Institute
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Goto Y
Central Research Laboratory Hitachi Ltd.
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Chu Shucheng
Faculty Of Engineering Shizuoka University
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Fujimura Kazuo
Susuki Co.
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Tokuda Yasunori
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Hanaoka Ken-ichi
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Saisho Tetsuhiro
Faculty Of Engineering Shizuoka University
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Ishida A
Faculty Of Engineering Shizuoka University
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Sakakibara Shingo
Yamaha Co.
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Ishino K
Shizuoka Univ. Hamamatsu Jpn
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Tanoue F
Yamaha Co.
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Kusakabe Y
Mitsubishi Electric Corp. Hyogo Jpn
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Yao Takafumi
Institute For Interdisciplinary Research Tohoku University
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TANOUE Fumiyasu
Yamaha Co.,
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Kanamoto Kyozo
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Okuno Yasuki
Research Institute For Scientific Measurements Tohoku University
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HANGYO Masanori
Research Center for Superconducting Materials and Electronics, Osaka University
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Chu Shuncheng
Faculty of Engineering, Shizuoka University
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Fujimura Kazuo
Susuki Corporation, Miyakoda Electronics Technical Center
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Oka Yasuo
Research Institute for Scientific Measurements, Tohoku University
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Takahiro Katsumi
Institute for Materials Research, Tohoku University
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CHU Shucheng
Faculty of Engineering, Shizuoka University
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FUJIMURA Kazuo
Suzuki Corporation, Miyakoda Technical Center
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Matsui Yasushi
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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TANI Masahiko
Kansai Advanced Research Center, National Institute of Information and Communications Technology
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SAKAI Kiyomi
Kansai Advanced Research Center, National Institute of Information and Communications Technology
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Sakai Kiyomi
Kansai Advanced Research Center Communication Research Laboratory
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MATSUI Yasuji
Central Research Laboratory, Mitsubishi Electric Corp.
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YUUKI Akimasa
Central Research Laboratory, Mitsubishi Electric Corp.
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TANI Masahiko
Communications Research Laboratory, Kansai Advanced Research Center
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SAKAI Kiyomi
Communications Research Laboratory, Kansai Advanced Research Center
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TOKUDA Yasunori
Semiconductor Research Laboratory, MITSUBISHI Electric Corporation
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KANAMOTO Kyozo
Semiconductor Research Laboratory, MITSUBISHI Electric Corporation
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ABE Yuji
Semiconductor Research Laboratory, MITSUBISHI Electric Corporation
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TSUKADA Noriaki
Semiconductor Research Laboratory, MITSUBISHI Electric Corporation
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Oka Yasuo
Research Institute For Scientific Measurements Tohoku University
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Muto Y
The Institute For Materials Research Tohoku University
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Yuuki A
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Yuuki Akimasa
Product Development Laboratory Mitsubishi Electric Corporation
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Yuuki Akimasa
Central Research Laboratory Mitsubishi Electric Corp.
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Tani Masahiko
Kansai Advanced Research Center Communication Research Laboratory
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Hangyo M
Research Center For Superconductor Photonics Osaka University
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Hangyo Masanori
Research Center For Superconducting Materials And Electronics Osaka University
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Hangyo Masanori
Department Of Applied Physics Osaka University
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Hangyo Masanori
Department Of Physics Faculty Of Science Kyoto University
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Takahiro Katsumi
Institute For Materials Research Tohoku University
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Matsui Yasuji
Central Research Laboratory Mitsubishi Electric Corp.
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Tsukada N
Aomori Univ. Aomori Jpn
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
著作論文
- Growth and Characterization of Hot-Wall Epitaxial InGaN Films Using Mixed (Ga+In) Source
- High-Quality InGaN Films Grown by Hot-Wall Epitaxy with Mixed (Ga+In) Source
- An IR Study on the Stability of Y(DPM)_3, Ba(DPM)_2 and Cu(CPM)_2 for UV Irradiation
- Influence of Ozone Concentration on the Preparation of Stoichiometric Superconducting Y-Ba-Cu-O Films by a Metalorganic Chemical Vapor Deposition Technique
- Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H Films
- Preparation of Nearly Stoichiometric Superconducting Y-Ba-Cu-O Films by an MOCVD Technique Using Ozone
- Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
- Spectroscopic Study on a Discharge Plasma of MOCVD Source Gases for High-T_C Superconducting Films
- Preparation and Characterization of Superconducting Y-Ba-Cu-O Films by the MOCVD Technique
- Near-Band-Edge Photoluminescence of GaAs Epitaxial Layers Grown at Low Temperature
- Characterization of Crystallinity in Low-Temperature-Grown GaAs Layers by Raman Scattering and Time-Resolved Photoreflectance Measurements
- Spectroscopic Characterization of Low-Temperature Grown GaAs Epitaxial Films