High-Quality InGaN Films Grown by Hot-Wall Epitaxy with Mixed (Ga+In) Source
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-15
著者
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HARIMA Hiroshi
Department of Electronics and Information Science, Kyoto Institute of Technology
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ISHINO Kenei
Faculty of Engineering, Shizuoka University
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FUJIYASU Hiroshi
Faculty of Engineering, Shizuoka University
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Fujiyasu Hiroshi
Faculty Of Engineering Shizuoka University
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Fujiyasu Hiroshi
Department Of Electronics Faculty Of Engineering Shizuoka University
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YAO Takafumi
Institute for Materials Research, Tohoku University
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Yao Takafumi
Institute For Materials Research Tohoku University
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Ishino Kenei
Faculty Of Engineering Shizuoka University
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SAKAKIBARA Shingo
Yamaha Corporation
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ISHIDA Akihiro
Faculty of Engineering, Shizuoka University
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Saisho Tetsuhiro
Faculty of Engineering, Shizuoka University
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Tanoue Fumiyasu
Yamaha Corporation
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Chen Yefan
Institute for Materials Research, Tohoku University
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CHU Shucheng
Faculty of Engineering, Shizuoka University
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FUJIMURA Kazuo
Suzuki Corporation, Miyakoda Technical Center
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Takeuchi Yasunori
Kek National Laboratory For High Energy Physics
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Ishida Akihiro
Faculty Of Engineering Shizuoka University
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Takeuchi Y
Institute For Materials Research Tohoku University
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Chen Yefan
Institute For Materials Research Tohoku University
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Chu Shucheng
Faculty Of Engineering Shizuoka University
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Fujimura Kazuo
Susuki Co.
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Harima H
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Harima Hiroshi
Department Of Applied Physics Osaha University
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Saisho Tetsuhiro
Faculty Of Engineering Shizuoka University
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Ishida A
Faculty Of Engineering Shizuoka University
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Sakakibara Shingo
Yamaha Co.
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Ishino K
Shizuoka Univ. Hamamatsu Jpn
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Tanoue F
Yamaha Co.
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Yao Takafumi
Institute For Interdisciplinary Research Tohoku University
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TANOUE Fumiyasu
Yamaha Co.,
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