Picosecond spectroscopy of ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) by hot wall epitaxy

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概要

• 論文の詳細を見る
• 静岡大学の論文

著者

• Ishida Akihiro

  Graduate School Of Electronic Science & Technology Shizuoka University

• Oka Y

  Faculty Of Integrated Human Studies Kyoto University

• Ishida Akihiro

  静岡大学工学部電気・電子工学科

• Fujiyasu Hiroshi

  静岡大学工学部電気・電子工学科

• Yang Huan

  静岡大学大学院電子科学研究科

• Wu Yi

  静岡大学工学部

• Kamashita Atsushi

  静岡大学工学部

• Souma Izuru

  東北大学科学計測研究所

• Oka Yasuo

  東北大学科学計測研究所

• Souma Izuru

  Research Institute For Scientific Measurements Tohoku Universtiy

• Ishida A

  Faculty Of Engineering Shizuoka University

関連論文

• Red Electroluminescent Devices Using Mn-Doped CdS(Se)- and CdTe-ZnS Superlattices
• ZnS:Mn Electroluminescent Films Prepared by Hot Wall Technique
• PbMgSrTe and PbSrTeSe Films Prepared by Hot-Wall Epitaxy
• Lead-Strontium-Telluride Films and Lasers Prepared by Hot-Wall Epitaxy
• Double Heterostructure Pb_Sr_xS/Pb_Sr_yS Lasers Prepared Using Hot Wall Epitaxy
• Dependence of Pb1-XSrXS/PbS DH Laser Properties on Active Layer Thickness and Cladding Layer Band Gap
• Growth of Pb_Cd_xSr_yS Films and SLs by Hot Wall Epitaxy for 3 μm Lasers, and Their Electrical Properties
• Resonant-tunneling electron emitter in an AlN∕GaN system
• AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields : Semiconductors
• PbSnCaTe Films and PbSnCaTe/PbSnTe Superlattices Prepared by Molecular Beam Epitaxy(Semiconductors)
• Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect : Semiconductors
• Growth and Characterization of Hot-Wall Epitaxial InGaN Films Using Mixed (Ga+In) Source
• PbCaTe Films and PbCaTe/PbTe Superlattices Prepared by Hot-Wall Epitaxy
• High-Quality InGaN Films Grown by Hot-Wall Epitaxy with Mixed (Ga+In) Source
• High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source (Ga+In) Method
• High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source(Ga+In)Method
• Growth and Characterization of Hot Wall Epitaxial GaN/InGaN Films UsingMetallic/Metalorganic Sources
• Characteristics of Chlorine-Doped ZnSe Films and ZnSe-ZnS Superlattices Grown by Hot Wall Epitaxy
• Characteristics of Nitrogen-Doped ZnTe Films and ZnTe-ZnSe Superlattices Grown by Hot Wall Epitaxy
• Picosecond spectroscopy of ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) by hot wall epitaxy
• Burstein-Moss Effect of PbTe-Pb_Sn_xTe Superlattice
• Spontaneous and Stimulated Emissions of Confined Excitons in Zn_Cd_xSe Multi-Quantum Wells
• Stimulated Emission Processes in Zn_Cd_xSe/ZnSe Multiquantum Wells
• Transformation of Amorphous SnO_x Films Studied by Electrical Resistivity and Optical Transmission

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