Lead-Strontium-Telluride Films and Lasers Prepared by Hot-Wall Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-15
著者
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Ishida Akihiro
Graduate School Of Electronic Science & Technology Shizuoka University
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Fujiyasu Hiroshi
Graduate School Of Electronic Science And Technology Shizuoka University
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Fujiyasu Hiroshi
Department Of Electronics Faculty Of Engineering Shizuoka University
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SAKURAI Nobuhiro
Graduate School of Electronic Science & Technology, Shizuoka University
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Sakurai Nobuhiro
Tsukishima Foods Industry Co. Ltd.
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Sakurai Nobuhiro
Graduate School Of Electronic Science And Technology Shizuoka University
関連論文
- Preparation of aluminum oxide films at low temperatures by a hot wall technique
- Red Electroluminescent Devices Using Mn-Doped CdS(Se)- and CdTe-ZnS Superlattices
- An Indication of Quantum Hall Effect in PbTe-Pb_Sn_xTe Superlattice
- PbMgSrTe and PbSrTeSe Films Prepared by Hot-Wall Epitaxy
- Lead-Strontium-Telluride Films and Lasers Prepared by Hot-Wall Epitaxy
- Double Heterostructure Pb_Sr_xS/Pb_Sr_yS Lasers Prepared Using Hot Wall Epitaxy
- Dependence of Pb1-XSrXS/PbS DH Laser Properties on Active Layer Thickness and Cladding Layer Band Gap
- Growth of Pb_Cd_xSr_yS Films and SLs by Hot Wall Epitaxy for 3 μm Lasers, and Their Electrical Properties
- Resonant-tunneling electron emitter in an AlN∕GaN system
- AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields : Semiconductors
- PbSnCaTe Films and PbSnCaTe/PbSnTe Superlattices Prepared by Molecular Beam Epitaxy(Semiconductors)
- Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect : Semiconductors
- Growth and Characterization of Hot-Wall Epitaxial InGaN Films Using Mixed (Ga+In) Source
- PbCaTe Films and PbCaTe/PbTe Superlattices Prepared by Hot-Wall Epitaxy
- High-Quality InGaN Films Grown by Hot-Wall Epitaxy with Mixed (Ga+In) Source
- High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source (Ga+In) Method
- High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source(Ga+In)Method
- Growth and Characterization of Hot Wall Epitaxial GaN/InGaN Films UsingMetallic/Metalorganic Sources
- Characteristics of Chlorine-Doped ZnSe Films and ZnSe-ZnS Superlattices Grown by Hot Wall Epitaxy
- Characteristics of Nitrogen-Doped ZnTe Films and ZnTe-ZnSe Superlattices Grown by Hot Wall Epitaxy
- Picosecond spectroscopy of ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) by hot wall epitaxy
- A New Technique Keeping off the Mn Evaporant from Oxygen Atmosphere during Reactive Evaporation Process : Surfaces, Interfaces, and Films
- Priority of the Mn Deposition Rate in Reactive Evaporation Conditions
- Burstein-Moss Effect of PbTe-Pb_Sn_xTe Superlattice
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- Stimulated Emission Processes in Zn_Cd_xSe/ZnSe Multiquantum Wells