High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source(Ga+In)Method

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概要

• 論文の詳細を見る

• High quality InGaN/GaN single heterostructures were prepared by using a simple mixed sources(Ga and In metal)method in a hot wall epitaxy(HWE)system. Strong near band edge emission peaks ranging from 370 to 465 nm in room temperature PL spectra and X-rays rocking curve FWHM of InGaN(0002)as narrow as 7.3 arcmin were obtained. Few additional dislocations were produced at the interface of InGaN/GaN or during the growth of InGanN. In incorporation can be controlled independently by the substrate temperature, N_2 partial pressure, and the mixed source temperature, respectively.

• 社団法人電子情報通信学会の論文
• 1999-01-21

著者

• ISHINO Kenei

  Faculty of Engineering, Shizuoka University

• FUJIYASU Hiroshi

  Faculty of Engineering, Shizuoka University

• Fujiyasu Hiroshi

  Faculty Of Engineering Shizuoka University

• Fujiyasu Hiroshi

  Department Of Electronics Faculty Of Engineering Shizuoka University

• Ishino Kenei

  Faculty Of Engineering Shizuoka University

• SAKAKIBARA Shingo

  Yamaha Corporation

• ISHIDA Akihiro

  Faculty of Engineering, Shizuoka University

• Saisho Tetsuhiro

  Faculty of Engineering, Shizuoka University

• Fujimura Kazuo

  Susuki Corporation, Miyakoda Electronics Technical Center

• Tanoue Fumiyasu

  Yamaha Corporation

• Shucheng CHU

  Faculty of Engineering, Shizuoka University

• Ishida Akihiro

  Faculty Of Engineering Shizuoka University

• Chu Shucheng

  Faculty Of Engineering Shizuoka University

• Fujimura Kazuo

  Susuki Co.

• Saisho Tetsuhiro

  Faculty Of Engineering Shizuoka University

• Ishida A

  Faculty Of Engineering Shizuoka University

• Sakakibara Shingo

  Yamaha Co.

• Ishino K

  Shizuoka Univ. Hamamatsu Jpn

• Tanoue F

  Yamaha Co.

• TANOUE Fumiyasu

  Yamaha Co.,

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