HWE法により成長させたBi_2Te_3単結晶薄膜の結晶評価と熱電特性

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概要

• 論文の詳細を見る
• 1999-10-15

著者

• FUJIYASU Hiroshi

  Faculty of Engineering, Shizuoka University

• Fujiyasu Hiroshi

  Faculty Of Engineering Shizuoka University

• ISHIDA Akihiro

  Faculty of Engineering, Shizuoka University

• Ishida Akihiro

  Faculty Of Engineering Shizuoka University

• IZAWA Kazuyuki

  Dev. Dept. 1, Suzuki Motor Corp.

• Izawa Kazuyuki

  Dev. Dept. 1 Suzuki Motor Corp.

関連論文

• Preparation of aluminum oxide films at low temperatures by a hot wall technique
• PbSnCaTe Films and PbSnCaTe/PbSnTe Superlattices Prepared by Molecular Beam Epitaxy(Semiconductors)
• Growth and Characterization of Hot-Wall Epitaxial InGaN Films Using Mixed (Ga+In) Source
• High-Quality InGaN Films Grown by Hot-Wall Epitaxy with Mixed (Ga+In) Source
• High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source (Ga+In) Method
• High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source(Ga+In)Method
• Scanning Tunneling Mieroscopy and Barrier-Height Observation of Stearic Acid Thin Films Prepared by Blot-Wall Technique
• HWE法により成長させたBi_2Te_3単結晶薄膜の結晶評価と熱電特性
• Properties of Photoluminescence from ZnTe-ZnSe Superlattices
• Stimulated Emission Processes in Zn_Cd_xSe/ZnSe Multiquantum Wells
• Electronic Transports for Thermoelectric Applications on ？-？ Semiconductors (Special Issue on Thermoelectric Conversion Materials (7))
• Electronic Transports for Thermoelectric Applications on IV-VI Semiconductors

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