Growth of Pillarlike GaN Nanostructures
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概要
- 論文の詳細を見る
We have characterized the growth of GaN nanostructures on Si (111). Hexagonal faceted pillarlike GaN nanostructures (GaN nanopillars) were grown by hot wall epitaxy. The GaN nanopillars were self-assembled. Scanning electron microscopy and atomic force microscopy were used to characterize the samples. The typical diameter of the GaN nanopillars was 200 nm. It was found that GaN nanopillars are grown only on a low-temperature GaN island buffer layer. By changing the annealing temperature of the buffer layer, the density of the GaN nanopillars was controlled from $0.4\times 10^{8}$ to $3.5\times 10^{8}$ cm-2.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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ISHINO Kenei
Department of Electronics, Faculty of Engineering, Shizuoka University
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Fujiyasu Hiroshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shizuoka University
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KOMINAMI Hiroko
Department of Electrical and Electronic Engineering, Shizuoka University
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MIMURA Hidenori
Department of Electrical and Electronic Engineering, Shizuoka University
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NAKANISHI Yoichiro
Department of Electrical and Electronic Engineering, Shizuoka University
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Inoue Yoku
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shizuoka University
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Ishida Akihiro
Department Of Applied Physics The National Defense Academy
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Sakakibara Shingo
Yamaha Co.
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Takeda Satoshi
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8651, Japan
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Ishida Akihiro
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8651, Japan
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Fujiyasu Hiroshi
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8651, Japan
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Inoue Yoku
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8651, Japan
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Sakakibara Shingo
Yamaha Corporation, 203 Matsunokijima, Toyooka-mura, Iwata 438-0192, Japan
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Kominami Hiroko
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8651, Japan
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Ishino Kenei
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8651, Japan
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Nakanishi Yoichiro
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8651, Japan
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Mimura Hidenori
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8651, Japan
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Takeda Satoshi
Department of Chemistry, Faculty of Science, Hokkaido University
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