PbSnCaTe Films and PbSnCaTe/PbSnTe Superlattices Prepared by Molecular Beam Epitaxy(Semiconductors)
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-06-15
著者
-
土屋 敏章
島根大学 総合理工学部
-
Tsuchiya T
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
-
Inoue Yasuo
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
-
ISHINO Kenei
Faculty of Engineering, Shizuoka University
-
FUJIYASU Hiroshi
Faculty of Engineering, Shizuoka University
-
Tsuchiya T
Department Of Electronics Doshisha University
-
Fujiyasu Hiroshi
Faculty Of Engineering Shizuoka University
-
Fujiyasu Hiroshi
Department Of Electronics Faculty Of Engineering Shizuoka University
-
Ishino Kenei
Faculty Of Engineering Shizuoka University
-
ISHIDA Akihiro
Faculty of Engineering, Shizuoka University
-
OHASHI Tatsuya
Faculty of Engineering, Shizuoka University
-
WANG Shulan
Graduate School of Electronic Science and Technology
-
TSUCHIYA Toshiyuki
Faculty of Engineering, Shizuoka University
-
INOUE Yoku
Faculty of Engineering, Shizuoka University
-
Wang S
Notheastern University
-
Tsuchiya Toshiharu
Faculty Of Engineering Shizuoka University
-
Tsuchiya Toshiyuki
Faculty Of Agriculture Iwate University
-
Ishida Akihiro
Faculty Of Engineering Shizuoka University
-
IZUMI Yoshitaka
NHK Science and Technical Research Laboratories
-
Ohashi Tatsuya
Faculty Of Engineering Shizuoka University
-
Iwai Yuki
Dep. Of Electronics And Bioinformatics Sci. And Technol. Meiji Univ.
-
Tsuchiya Takenobu
Department Of Electrical Electronics And Information Engineering Kanagawa University
-
Ishida A
Faculty Of Engineering Shizuoka University
-
Ishino K
Shizuoka Univ. Hamamatsu Jpn
-
Ohasi Tatsuya
Faculty of Engineering, Shizuoka University
関連論文
- ナノスケールMOSデバイスにおける界面物性の揺らぎ : 界面トラップ1個1個を検出して評価する
- SOI基板材料の品質評価と技術課題
- Preparation and characterization of epitaxial VO2 films on sapphire using postepitaxial topotaxy route via epitaxial V2O3 films
- Epitaxial growth of La_Ba_MnO_3 thin films on SrTiO_3 and LaAlO_3 substrates by metal-organic deposition process
- Electrical Properties of La_Ca_MnO_3 Thin Films Obtained by Metal-Organic Deposition (MOD) using Excimer Laser and Thermal Annealing
- Large Temperature Coefficient of Resistance in La_Ca_MnO_3 Thin Films Obtained by Metal Organic Deposition Process
- Low Temperature Growth of Epitaxial La_Sr_MnO_3 Thin Films by an Excimer-Laser-Assisted Coating Pyrolysis Process
- Preparation of Epitaxial YBa_2Cu_3O_/CeO_2 Multilayer Films on Yttria-stabilized Zirconia (100) by All-Coating-Pyrolysis Process : Superconductors
- Preparation of PbTiO_3 Thin Films Using a Coating Photolysis Process with ArF Excimer Laser
- Direct Conversion of Metal Acetylacetonates and Metal Organic Acid Salts into Metal Oxides Thin Films Using Coating Photolysis Process with An ArF Excimer Laser
- Direct Conversion of Titanium Alkoxide into Crystallized TiO_2 (rutile) Using Coating Photolysis Process with ArF Excimer Laser
- Effective-Time of Pulsed Photothermal Heating for Polycrystalline Nucleation of Perovskite Oxide Films from an Amorphous Matrix
- Low-temperature fabrication of red phosphor Ca0.997Pr0.002TiO3 thin film using excimer laser assisted metal organic deposition
- Critical Current Densities at 77 K in Ba_2YCu_3O_-Ag Films Prepared by Dipping-Pyrolysis Process
- Preparation and Superconducting Properties of Bi-Pb-Sr-Ca-Cu-O Films (T_c=106 K) by the Dipping-Pyrolysis Process
- Preparation of Superconducting Ba_2YCu_3O_/Ag Composite Films by the Dipping-Pyrolysis Process Using Metal Naphthenates at 750℃
- SiGe/SiヘテロチャネルMOSFETにおける過渡チャージポンピング特性
- SiGe/SiヘテロMOSFETにおけるヘテロ界面のホットキャリア局所劣化
- SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生
- BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET
- Preparation of aluminum oxide films at low temperatures by a hot wall technique
- Red Electroluminescent Devices Using Mn-Doped CdS(Se)- and CdTe-ZnS Superlattices
- ZnS:Mn Electroluminescent Films Prepared by Hot Wall Technique
- Low-Frequency Noise in Si_Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors : Semiconductors
- Si_Ge_xチャネルpMOSFETにおける低周波雑音とSi_Ge_x/Siヘテロ構造品質との対応
- Si_Ge_xチャネルpMOSFETにおける低周波雑音とSi_Ge_x/ヘテロ構造品質との対応
- Si_Ge_xチャネルpMOSFETにおける低周波雑音とSi_Ge_x/ヘテロ構造品質との対応
- Saturation Phenomenon of Stress-Induced Gate Leakage Current
- シリコン量子井戸構造の作製と評価
- シリコン量子井戸構造の作製と評価
- シリコン量子井戸構造の作製と評価
- 低温多結晶シリコンTFTのデバイス特性や信頼性に及ぼす粒界の影響(有機EL, TFT,及び一般)
- 低温多結晶シリコンTFTのデバイス特性や信頼性に及ぼす粒界の影響(有機EL, TFT,及び一般)
- 低温多結晶シリコンTFTのデバイス特性や信頼性に及ぼす粒界の影響(有機EL, TFT,及び一般)
- SOI CMOSデバイス
- SOI CMOSの現状と展望
- SOI CMOSの現状と展望
- SOI CMOSの現状と展望
- One-step grown aligned bulk carbon nanotubes by chloride mediated chemical vapor deposition
- Resonant-tunneling electron emitter in an AlN∕GaN system
- Strong luminescence from dislocation-free GaN nanopillars
- AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields : Semiconductors
- PbSnCaTe Films and PbSnCaTe/PbSnTe Superlattices Prepared by Molecular Beam Epitaxy(Semiconductors)
- Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect : Semiconductors
- Growth and Characterization of Hot-Wall Epitaxial InGaN Films Using Mixed (Ga+In) Source
- PbCaTe Films and PbCaTe/PbTe Superlattices Prepared by Hot-Wall Epitaxy
- High-Quality InGaN Films Grown by Hot-Wall Epitaxy with Mixed (Ga+In) Source
- High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source (Ga+In) Method
- High Quality InGaN/GaN Single Heterostructures Grown by HWE With Mixed Source(Ga+In)Method
- Growth and Characterization of Hot Wall Epitaxial GaN/InGaN Films UsingMetallic/Metalorganic Sources
- Characteristics of Chlorine-Doped ZnSe Films and ZnSe-ZnS Superlattices Grown by Hot Wall Epitaxy
- Characteristics of Nitrogen-Doped ZnTe Films and ZnTe-ZnSe Superlattices Grown by Hot Wall Epitaxy
- Crystal Sructure of Zirconium Oxide Deposited as Thin Films from Zr-acetylacetonate and Zr-ter-butoxide by Laser Chemical Vapor Deposition Technique
- Crystal Structures of the TiO_2 Films on the Quartz Substrate and the Powder formed in the Gaseous Phase by ArF Laser Photolysis of Ti(O-i-C_3H_7)_4
- Epitaxial growth of La0.7Ba0.3MnO3 thin films on SrTiO3 and LaAlO3 substrates by metal-organic deposition (Special issue: Solid state devices and materials)
- バイアス・温度(BT)処理を用いたnMOSFET/SIMOXの特性改善
- Analysis of Light-Induced Degradation in Amorphous Silicon Alloy Solar Cells and Its Application to Accelerated Test Method
- Properties and Degradation of Polarization Reversal of Soft BaTiO_3 Ceramics for Ferroelectric Thin-Film Devices
- Atomic Composition and Structural Properties of Blue Emitting BaAl_2S_4:Eu Electroluminescent Thin Films
- Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field-Effect Transistors
- Body-Charge-Induced Switching Characteristics in Fully Depleted Silicon-on-Insulator Digital Circuits
- Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region
- 300-kilo-Gate Sea-of-Gate Type Gate Arrays Fabricated Using 0.25-μm-Gate Ultra-Thin-Film Fully-Depleted Complementary Metal-Oxide-Semiconductor Separation by IMplanted OXygen (CMOS/SIMOX) Technology with Tungsten-Covered Source and Drain
- UV-Absorbing Substance in the Red Alga Porphyra yezoensis (Bangiales, Rhodophyta) Block Thymine Photodimer Production
- Measurement of Fluorescence Quantum Yield of Ultraviolet-Absorbing Substance Extracted from Red Alga : Porphyra yezoensis and its Photothermal Spectroscopy
- Density of Ar Metastable Atoms on the Discharge Tube Wall Measured by Evanescent Laser Spectroscopy
- Electron Swarm Parameters Measured Using Photoelectrons Induced by a Pulse Laser
- Numerical Analysis of Underwater Acoustic Lens Using Wide-Angle Parabolic Equation Method
- Direct Writing of Silicon Lines by Pyrolytic Argon Laser CVD
- The Depth Profiling of the Crystal Quality in Laser-Annealed Polycrystalline Si Films by Raman Microprobe
- Raman Image Measurements of Laser-Recrystallized Polycrystalline Si Films by a Scanning Raman Microprobe
- Preparation and Characterization of Ferroelectric BaTi_(Hf_ Zr_)_O_3 Thin Films by Sol-Gel Process Using Titanium and Zirconium Alkoxides
- High-Power,790 nm,Eight-Beam AlGaAs Laser Array with a Monitoring Photodiode : Visible Lasers
- High-Power, 790 nm, Eight-Beam AlGaAs Laser Array with a Monitoring Photodiode
- CW Operation and Extremely Low Capacitance of TJ-BH MQW Laser Diodes Fabricated by Entire MOVPE : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Pressure Dependence of Band Discontinuity in GaAs/AlInP Quantum Well Structures
- Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories
- Thermal Cracking Effects of CeCl_3 Dopant on Blue Electroluminescent Properties in SrGa_2S_4:Ce Thin Films
- An X-Ray Photoelectron Spectroscopy Study of Elements' Chemical States in SrGa_2S_4Ce Blue Electroluminescent Thin Films
- Red Electroluminescence of Mn-doped CuAlS_2 Powder and Single Crystal
- Ce-Activated SrS Thin Film Electroluminescent Devices Fabricated by Multi Source Deposition Using Ga_2S_3 Precursor
- Dependence on Ce Concentration of Blue Emission and Crystallographic Properties in SrGa_2S_4:Electroluminescent Thin Films Grown by Molecular Beam Epitaxy
- Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma Chemical Vapor Deposition
- Search for Objects on the Deep-Sea Floor Using Side Scan Sonar with a Tilted Arrangement Transducer Array
- Sea Trial Results of a Cross Fan Beam Type Sub-Bottom Profiler
- Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma CVD
- Characterization of Stable Fluorine-Doped Silicon Oxide Film Prepared by Biased Helicon Plasma Chemical Vapor Deposition
- Evaluation of the Performance of Deep Sea Survey Sonars from the Results of Search for a Sunken Ship
- Improving the Light Out-Coupling Properties of Inorganic Thin-Film Electroluminescent Devices
- Simple Measurement of Quantum Efficiency in Organic Electroluminescent Devices : Instrumentation, Measurement, and Fabrication Technology
- Wide-Angle Parabolic Equation Solution of Ocean Acoustic Propagation with Lossy Penetrable Bottom
- Numerical Analysis of Acoustical Propagation in Ocean with Warm and Could Water Mass Used by The Three-Dimensional Wide-Angle Parabolic Equation Method
- Three-Dimensional Ray Simulation of Sound Propagation in Ocean with a Geostrophic Current
- Estimation of Receiving Waveform of Ultrasonic Aerial Back Sonar Calculated by Finite Difference Time Domain Method (Short Note)
- Numerical Analysis of Acoustical Propagation Characteristics in Central Equatorial Pacific Ocean with Ridges of Seabed Used by Three-Dimensional Parabolic Equation Method
- Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO_2 : Beam Induced Physics and Chemistry
- Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO_2
- Blue Electroluminescent SrGa_2S_4:Ce Thin Films Grown by Molecular Beam Epitaxy
- Basic Study of Properties of Planate Acoustic Lens Constructed with Phononic Crystal Structure (Special Issue : Ultrasonic Electronics)
- Transmission electron microscopy study on the effects of the ultrasound contrast agent Levovist on hepatic cells