Tsuchiya T | National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

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著作論文

ナノスケールMOSデバイスにおける界面物性の揺らぎ : 界面トラップ1個1個を検出して評価する
Preparation and characterization of epitaxial VO2 films on sapphire using postepitaxial topotaxy route via epitaxial V2O3 films
Epitaxial growth of La_Ba_MnO_3 thin films on SrTiO_3 and LaAlO_3 substrates by metal-organic deposition process
Electrical Properties of La_Ca_MnO_3 Thin Films Obtained by Metal-Organic Deposition (MOD) using Excimer Laser and Thermal Annealing
Large Temperature Coefficient of Resistance in La_Ca_MnO_3 Thin Films Obtained by Metal Organic Deposition Process
Low Temperature Growth of Epitaxial La_Sr_MnO_3 Thin Films by an Excimer-Laser-Assisted Coating Pyrolysis Process
Preparation of Epitaxial YBa_2Cu_3O_/CeO_2 Multilayer Films on Yttria-stabilized Zirconia (100) by All-Coating-Pyrolysis Process : Superconductors
Preparation of PbTiO_3 Thin Films Using a Coating Photolysis Process with ArF Excimer Laser
Direct Conversion of Metal Acetylacetonates and Metal Organic Acid Salts into Metal Oxides Thin Films Using Coating Photolysis Process with An ArF Excimer Laser
Direct Conversion of Titanium Alkoxide into Crystallized TiO_2 (rutile) Using Coating Photolysis Process with ArF Excimer Laser
Effective-Time of Pulsed Photothermal Heating for Polycrystalline Nucleation of Perovskite Oxide Films from an Amorphous Matrix
Low-temperature fabrication of red phosphor Ca0.997Pr0.002TiO3 thin film using excimer laser assisted metal organic deposition
Critical Current Densities at 77 K in Ba_2YCu_3O_-Ag Films Prepared by Dipping-Pyrolysis Process
Preparation and Superconducting Properties of Bi-Pb-Sr-Ca-Cu-O Films (T_c=106 K) by the Dipping-Pyrolysis Process
Preparation of Superconducting Ba_2YCu_3O_/Ag Composite Films by the Dipping-Pyrolysis Process Using Metal Naphthenates at 750℃
SiGe/SiヘテロチャネルMOSFETにおける過渡チャージポンピング特性
SiGe/SiヘテロMOSFETにおけるヘテロ界面のホットキャリア局所劣化
SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生
BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET
Low-Frequency Noise in Si_Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors : Semiconductors
Si_Ge_xチャネルpMOSFETにおける低周波雑音とSi_Ge_x/Siヘテロ構造品質との対応
Si_Ge_xチャネルpMOSFETにおける低周波雑音とSi_Ge_x/ヘテロ構造品質との対応
Si_Ge_xチャネルpMOSFETにおける低周波雑音とSi_Ge_x/ヘテロ構造品質との対応
シリコン量子井戸構造の作製と評価
シリコン量子井戸構造の作製と評価
低温多結晶シリコンTFTのデバイス特性や信頼性に及ぼす粒界の影響(有機EL, TFT,及び一般)
低温多結晶シリコンTFTのデバイス特性や信頼性に及ぼす粒界の影響(有機EL, TFT,及び一般)
低温多結晶シリコンTFTのデバイス特性や信頼性に及ぼす粒界の影響(有機EL, TFT,及び一般)
SOI CMOSデバイス
PbSnCaTe Films and PbSnCaTe/PbSnTe Superlattices Prepared by Molecular Beam Epitaxy(Semiconductors)
Crystal Sructure of Zirconium Oxide Deposited as Thin Films from Zr-acetylacetonate and Zr-ter-butoxide by Laser Chemical Vapor Deposition Technique
Crystal Structures of the TiO_2 Films on the Quartz Substrate and the Powder formed in the Gaseous Phase by ArF Laser Photolysis of Ti(O-i-C_3H_7)_4
Epitaxial growth of La0.7Ba0.3MnO3 thin films on SrTiO3 and LaAlO3 substrates by metal-organic deposition (Special issue: Solid state devices and materials)
Numerical Analysis of Underwater Acoustic Lens Using Wide-Angle Parabolic Equation Method
Estimation of Receiving Waveform of Ultrasonic Aerial Back Sonar Calculated by Finite Difference Time Domain Method (Short Note)
Basic Study of Properties of Planate Acoustic Lens Constructed with Phononic Crystal Structure (Special Issue : Ultrasonic Electronics)
Transmission electron microscopy study on the effects of the ultrasound contrast agent Levovist on hepatic cells

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