CW Operation and Extremely Low Capacitance of TJ-BH MQW Laser Diodes Fabricated by Entire MOVPE : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-12-20
著者
-
Inoue Yasuo
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
-
Gotoh H
Research Center Mitsubishi Kasei Co.
-
Gotoh H
Ntt Corp. Kanagawa Jpn
-
Shimoyama Kenji
Thin Film Laboratory Research Center Mitsubishi Kasei Corporation
-
Suzuki Y
Electrotechnical Laboratory
-
IZUMI Yoshitaka
NHK Science and Technical Research Laboratories
-
KATOH Masanori
Thin Film Laboratory, Research Center, Mitsubishi Kasei Corporation
-
SUZUKI Yoshihiro
Electrotechnical Laboratory
-
SATOH Takuzoh
Electrotechnical Laboratory
-
INOUE Yuichi
Thin Lilm Laboratory, Research Center, Mitsubishi Kasei Corporation
-
NAGAO Satoru
Thin Lilm Laboratory, Research Center, Mitsubishi Kasei Corporation
-
GOTOH Hideki
Thin Lilm Laboratory, Research Center, Mitsubishi Kasei Corporation
-
NAGAO Satoru
Research, Center, Mitsubishi Kasei Co.
-
Iwai Yuki
Dep. Of Electronics And Bioinformatics Sci. And Technol. Meiji Univ.
-
Nagao S
Mitsubishi Chemical Corp. Ibaraki Jpn
-
Katoh Masanori
Thin Film Laboratory Research Center Mitsubishi Kasei Corporation
関連論文
- Saturation Phenomenon of Stress-Induced Gate Leakage Current
- Zn_Cd_xO/ZnO Heterostructures for Visible Light Emitting Devices
- One-step grown aligned bulk carbon nanotubes by chloride mediated chemical vapor deposition
- Growth of Pillarlike GaN Nanostructures
- Resonant-tunneling electron emitter in an AlN∕GaN system
- Strong luminescence from dislocation-free GaN nanopillars
- AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields : Semiconductors
- PbSnCaTe Films and PbSnCaTe/PbSnTe Superlattices Prepared by Molecular Beam Epitaxy(Semiconductors)
- Quantum-Cascade Structure in AlN/GaN System Assisted by Piezo-Electric Effect : Semiconductors
- High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
- Analysis of Light-Induced Degradation in Amorphous Silicon Alloy Solar Cells and Its Application to Accelerated Test Method
- Atomic Composition and Structural Properties of Blue Emitting BaAl_2S_4:Eu Electroluminescent Thin Films
- UV-Absorbing Substance in the Red Alga Porphyra yezoensis (Bangiales, Rhodophyta) Block Thymine Photodimer Production
- Measurement of Fluorescence Quantum Yield of Ultraviolet-Absorbing Substance Extracted from Red Alga : Porphyra yezoensis and its Photothermal Spectroscopy
- Density of Ar Metastable Atoms on the Discharge Tube Wall Measured by Evanescent Laser Spectroscopy
- Electron Swarm Parameters Measured Using Photoelectrons Induced by a Pulse Laser
- Direct Writing of Silicon Lines by Pyrolytic Argon Laser CVD
- The Depth Profiling of the Crystal Quality in Laser-Annealed Polycrystalline Si Films by Raman Microprobe
- Raman Image Measurements of Laser-Recrystallized Polycrystalline Si Films by a Scanning Raman Microprobe
- High-Power,790 nm,Eight-Beam AlGaAs Laser Array with a Monitoring Photodiode : Visible Lasers
- High-Power, 790 nm, Eight-Beam AlGaAs Laser Array with a Monitoring Photodiode
- CW Operation and Extremely Low Capacitance of TJ-BH MQW Laser Diodes Fabricated by Entire MOVPE : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Pressure Dependence of Band Discontinuity in GaAs/AlInP Quantum Well Structures
- Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories
- Thermal Cracking Effects of CeCl_3 Dopant on Blue Electroluminescent Properties in SrGa_2S_4:Ce Thin Films
- Leakage Mechanism of Local Junctions Forming Main or Tail Mode of DRAM Retention Characteristics
- An X-Ray Photoelectron Spectroscopy Study of Elements' Chemical States in SrGa_2S_4Ce Blue Electroluminescent Thin Films
- Red Electroluminescence of Mn-doped CuAlS_2 Powder and Single Crystal
- Structural Analysis for Water Absorption of SiOF Films Prepared by High-Density-Plasma Chemical Vapor Deposition
- Ce-Activated SrS Thin Film Electroluminescent Devices Fabricated by Multi Source Deposition Using Ga_2S_3 Precursor
- Dependence on Ce Concentration of Blue Emission and Crystallographic Properties in SrGa_2S_4:Electroluminescent Thin Films Grown by Molecular Beam Epitaxy
- Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma Chemical Vapor Deposition
- Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma CVD
- Characterization of Stable Fluorine-Doped Silicon Oxide Film Prepared by Biased Helicon Plasma Chemical Vapor Deposition
- Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam
- Improving the Light Out-Coupling Properties of Inorganic Thin-Film Electroluminescent Devices
- Simple Measurement of Quantum Efficiency in Organic Electroluminescent Devices : Instrumentation, Measurement, and Fabrication Technology
- Molecular Beam Epitaxy of In_Ga_Sb
- S-Doping of MBE-GaSb with H_2S Gas
- Spatially Ordered Self-Assembled Quantum Dots with Uniform Shapes Fabricated by Patterning Nanoscale SiN Islands
- Exciton Spin Relaxation Properties in Zero Dimensional Semiconductor Quantum Dots
- Effects of Dimensionality on Radiative Recombination Lifetime of Excitons in Thin Quantum Boxes of Intermediate Regime between Zero and Two Dimensions ( Quantum Dot Structures)
- Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO_2 : Beam Induced Physics and Chemistry
- Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO_2
- Blue Electroluminescent SrGa_2S_4:Ce Thin Films Grown by Molecular Beam Epitaxy
- Effect of electron spin-spin exchange interaction on spin precession in coupled quantum well
- Reflection High-Energy Electron Diffraction Intensity Oscillations during Ge_xSi_ MBE Growth on Si(001) Substrates