Molecular Beam Epitaxy of In_<0.2>Ga_<0.8>Sb
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概要
- 論文の詳細を見る
The MBE growth of In_<0.2>Ga_<0.8>Sb is examined. Undoped films show p-type conduction. Sulfur doped n-type In_<0.2>Ga_<0.8>Sb with H_2S gas, which has a mobility of 3000-3500 cm^2/V・sec, is obtained. The value is slightly lower than that of bulk In_<0.2>Ga_<0.8>Sb. This may be caused by lattice mismatch between GaAs substrate and In_<0.2>Ga_<0.8>Sb film. N-type In_<0.2>Ga_<0.8>Sb has two donor levels. The deeper one is associated with sulfur, and the other shallow one is similar to the donor level in undoped MBE InSb.
- 社団法人応用物理学会の論文
- 1982-12-20
著者
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Gotoh Hideki
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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KIMATA Morihiko
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Gotoh H
Ntt Corp. Kanagawa Jpn
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YAMAMOTO Tohru
Department of Developmental Biology,Department of Cellular Biology,Institute of Molecular and Cellul
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Yamamoto Tohru
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Kimata Morihiko
Department Of Electrical Engineering Of Waseda University
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Yamamoto Tohru
Department of Chemical Engineering, Yokohama National University
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