Energy-Band Bend Shifts at an N-Type GaAs(100) Surface Exposed to O_2 and Electron-Irradiated as Detected by UPS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-12-05
著者
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Takayama Satoshi
Department of Integrated Pulmonology, Tokyo Medical and Dental University
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Takayama Satoshi
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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HIRAMATSU Tomoyasu
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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MINAMI Yoichiro
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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KIMATA Morihiko
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Minami Yoichiro
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Kimata Morihiko
Department Of Electrical Engineering Of Waseda University
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Hiramatsu Tomoyasu
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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- Energy-Band Bends at GaAs Surfaces in Vacuum-Evaporated-SiO_/N-Type (100) GaAs Systems Detected by UPS Measurements
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