Molecular Beam Epitaxial Growth of InAs
スポンサーリンク
概要
- 論文の詳細を見る
Thin crystalline films of InAs have been heteroepitaxially grown on (100) surface of GaAs by molecular beam epitaxy. The films are evaluated by optical microscope, SEM, RHEED and electrical measurements. In spite of the existence of a large lattice mismatch between InAs and GaAs, specular InAs films are obtained. Undoped InAs films show the n-type conduction, and their electron concentrations and mobilities are varied depending on the substrate temperature (T_s) during growth. At T_s=480℃, single crystalline films with high crystallographic quality and flat surfaces are grown. Furthermore, Mg atoms are successfully doped into InAs during the MBE growth to obtain p-type films.
- 社団法人応用物理学会の論文
- 1977-12-05
著者
-
KIMATA Morihiko
Department of Electrical Engineering, School of Science and Engineering, Waseda University
-
YANO Mitsuaki
Department of Electrical Engineering, Osaka Institute of Technology
-
Yano Mitsuaki
Department Of Electrical Engineering School Of Science And Engineering Waseda University
-
Kimata Morihiko
Department Of Electrical Engineering Of Waseda University
-
MATSUSHIMA Yuichi
Department of Electrical Engineering, School of Science and Engineering, Waseda University
-
NOGAMI Masaharu
Department of Electrical Engineering, School of Science and Engineering, Waseda University
-
Matsushima Yuichi
Department Of Electrical Engineering School Of Science And Engineering Waseda University:(present Ad
-
Nogami Masaharu
Department Of Electrical Engineering School Of Science And Engineering Waseda University:(present Ad
-
YANO Mitsuaki
Department of Electrical Engineering, School of Science and Engineering, Waseda University
-
NOGAMI Masaharu
Department of Electrical Engineering, School of Science and Engineering, Waseda University:(Present address) Fujitsu Limited
関連論文
- Energy-Band Bend Shifts at an N-Type GaAs(100) Surface Exposed to O_2 and Electron-Irradiated as Detected by UPS
- Energy-Band Bends at GaAs Surfaces in Vacuum-Evaporated-SiO_/N-Type (100) GaAs Systems Detected by UPS Measurements
- Charge-storage Effect of Vertically Stacked InAs Nanodots Embedded in AI_Ga_As Matrix
- Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well
- On the Electroluminescence in ZnS phosphor
- Low Temperature Growth of Gallium Nitride
- Molecular Beam Epitaxy of In_Ga_Sb
- S-Doping of MBE-GaSb with H_2S Gas
- Multiple Negative Resistance in Ge Diode
- Surface Cleaning of GaSb (100) Substrates for Molecular-Beam Epitaxy
- Field Dependent Channel Currents in Germanium Grain Boundaries
- Interface Properties of a Vacuum-Evaporated-SiO_/GaAs System Detected by Surface Acoustic Wave
- C-V Characteristics of Al/Vacuum-Evaporated-SiO_/GaAs Systems
- Low Frequency Oscillations in Copper Doped Germanium
- Photoresponse of Germanium Grain Boundaries
- Current Flow in Negative Resistance Diode
- Molecular Beam Epitaxy of GaSb and GaSb_xAs_
- Molecular Beam Epitaxial Growth of InAs
- Molecular Beam Epitaxial Growth and Characterization of the Vertically Aligned InAs Quantum Dots Embedded in Al_Ga_As
- Self-Assembling Molecular Beam Epitaxial Growth of the InAs Quantum Dots Embedded in Deep Al_Ga_As Barriers
- Actively Mode-Locked and Q-Switched Phosphate Glass Oscillator
- Actively Mode-Locked and Q-Switched YAG Laser with Precise Synchronizability
- Molecular Beam Epitaxy of In_xGa_Sb (0≦x≦1)
- On the Arc Resistance