S-Doping of MBE-GaSb with H_2S Gas
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概要
- 論文の詳細を見る
The possibility of S-doping MBE-GaSb using H_2S gas has been demonstrated. The sulfer atoms are thermally dissociated from the H_2S gas, and are adsorbed at Sb vacancy sites. The S sticking coefficient depends on the Sb coverage. The electron mobility of S-doped GaSb is relatively low. This may be caused by a high compensation ratio and lattice mismatch between the GaAs substrate and the GaSb film. From the experimental results, the activation energy of the S-donor is estimated to be about 75 meV.
- 社団法人応用物理学会の論文
- 1981-12-05
著者
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Gotoh Hideki
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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KURODA Shigeru
Department of Silkworm Breeding, Sericultural Experiment Station,
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KIMATA Morihiko
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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FUKUSHIMA MASAYUKI
Department of Surgery 1, University of Occupational and Environmental Health
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Gotoh H
Ntt Corp. Kanagawa Jpn
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Fukushima Masayuki
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Kuroda Shigeru
Department Of Electrical Engineering School Of Science And Engineering Waseda University:(present Ad
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YAMAMOTO Tohru
Department of Developmental Biology,Department of Cellular Biology,Institute of Molecular and Cellul
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Yamamoto Tohru
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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SASAMOTO Kiyoshi
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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TAMAMURA Kohshi
Department of Electrical Engineering, School of Science and Engineering, Waseda University
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Kimata Morihiko
Department Of Electrical Engineering Of Waseda University
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Tamamura Kohshi
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Sasamoto Kiyoshi
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Kuroda Shigeru
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Yamamoto Tohru
Department of Chemical Engineering, Yokohama National University
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