AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-11-15

著者

• ISHIDA Akihiro

  Department of Electrical and Electronic Engineering, Shizuoka University

• Ishida Akihiro

  Graduate School Of Electronic Science & Technology Shizuoka University

• Inoue Yasuo

  Lsi Research & Development Laboratory Mitsubishi Electric Corporation

• KAN Hirofumi

  Central Research Laboratory, Hamamatsu Photonics K.K.

• Fujiyasu Hiroshi

  Department Of Electronics Faculty Of Engineering Shizuoka University

• INOUE Yoku

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University

• KUWABARA Masakazu

  Central Research Laboratory, HPK

• FUJIYASU Hiroshi

  Central Research Laboratory, HPK

• Kan Hirofumi

  Central Research Institute Hamamatsu Photonics K. K.

• Kan Hirofumi

  Central Research Laboratory Hpk

• Inoue Yoku

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Shizuoka University

• Ishida Akihiro

  Department Of Applied Physics The National Defense Academy

• IZUMI Yoshitaka

  NHK Science and Technical Research Laboratories

• Iwai Yuki

  Dep. Of Electronics And Bioinformatics Sci. And Technol. Meiji Univ.

• Ishida A

  Faculty Of Engineering Shizuoka University

• Kuwabara Masakazu

  Central Research Laboratory Hpk

• Kuwabara Masakazu

  Central Research Laboratory Hamamatsu Photonics K. K.

• Kuwabara Masakazu

  Central Research Laboratories, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601, Japan

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