InNAsSb Single Crystals with Cutoff Wavelength of 11-13.5 μm Grown by Melt Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Gong X
Institute Of Semiconductor And Information Technology College Of Electronics And Information Enginee
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YAMAGUCHI Tomuo
Research Institute of Electronics, Shizuoka University
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AOYAMA Mitsuru
Research Institute of Electronics, Shizuoka University
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KAN Hirofumi
Central Research Laboratory, Hamamatsu Photonics K.K.
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GAO Yu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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GONG Xiu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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DAI Ning
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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Kan Hirofumi
Central Research Institute Hamamatsu Photonics K. K.
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Kan H
Hamamatsu Photonics K.k. Hamakita Jpn
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