GAO Yu | National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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概要
- 同名の論文著者
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy oの論文著者
関連著者
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GAO Yu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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GONG Xiu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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Gong X
Institute Of Semiconductor And Information Technology College Of Electronics And Information Enginee
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YAMAGUCHI Tomuo
Research Institute of Electronics, Shizuoka University
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DAI Ning
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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Kan Hirofumi
Central Research Institute Hamamatsu Photonics K. K.
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Dai Ning
National Laboratory For Infrared Physics Shanghai Institute Of Technical Physics Chinese Academy Of
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Yamaguchi Tomuo
Research Institute Of Electronics Shizuoka University
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AOYAMA Mitsuru
Research Institute of Electronics, Shizuoka University
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KAN Hirofumi
Central Research Laboratory, Hamamatsu Photonics K.K.
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Yamaguchi T
Microelectronics Research Center Sanyo Electric Co. Ltd.
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GUI Yong
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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Aoyama Mitsuru
Research Institute Of Electronics Shizuoka University
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Kan H
Hamamatsu Photonics K.k. Hamakita Jpn
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Gui Yong
National Laboratory For Infrared Physics Shanghai Institute Of Technical Physics Chinese Academy Of
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Kan Hirofumi
Central Research Institute, Hamamatsu Photonics K. K., 5000 Hirokuchi, Hamakita 434-8601, Japan
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Yamaguchi Tomuo
Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu 432-8011, Japan
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Dai Ning
National Laboratory For Infrared Physics, ShangHai Institute of Technical Physics, Chinese Academy of Science, 420 Zhong Shan Bei Yi Road, ShangHai 200083, China
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Dai Ning
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 420 Zhong Shan Bei Yu Road, Shanghai 200083, China
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Aoyama Mitsuru
Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu 432-8011, Japan
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Gui Yong
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 420 Zhong Shan Bei Yu Road, Shanghai 200083, China
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Gao Yu
National Laboratory For Infrared Physics, ShangHai Institute of Technical Physics, Chinese Academy of Science, 420 Zhong Shan Bei Yi Road, ShangHai 200083, China
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Gao Yu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 420 Zhong Shan Bei Yu Road, Shanghai 200083, China
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Gong Xiu
National Laboratory For Infrared Physics, ShangHai Institute of Technical Physics, Chinese Academy of Science, 420 Zhong Shan Bei Yi Road, ShangHai 200083, China
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Gong Xiu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 420 Zhong Shan Bei Yu Road, Shanghai 200083, China
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Yamaguchi Tomuo
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432, Japan
著作論文
- Electrical Properties of Melt-Epitaxy-Grown InAs_Sb_ Layers with Cutoff Wavelength of 12μm
- InNAsSb Single Crystals with Cutoff Wavelength of 11-13.5 μm Grown by Melt Epitaxy
- InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5 μm Grown by Melt Epitaxy
- Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96 Layers with Cutoff Wavelength of 12 μm