InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5 μm Grown by Melt Epitaxy
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概要
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We grew, for the first time, InNAsSb single crystals with a room temperature cutoff wavelength of 11–13.5 μm on (100) InAs substrates by melt epitaxy (ME). The crystals were characterized using X-ray diffraction, electron-probe microanalysis (EPMA), temperature-dependent transmittance and Van der Pauw measurements. An obvious redshift of cutoff wavelength was observed with increasing N concentration from 13 to 19% in the epilayers. The cutoff wavelength varies from 12.5 to 8.9 μm in the temperature range from 300 to 77 K. The thick epilayers show a good macroscopic homogeneity of the composition. An electron mobility of 55,800 cm2/Vs with a carrier density of $1.08\times 10^{16}$ cm-3 was obtained at 77 K, indicating possible applications for infrared photodevices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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GAO Yu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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GONG Xiu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy o
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Kan Hirofumi
Central Research Institute Hamamatsu Photonics K. K.
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Dai Ning
National Laboratory For Infrared Physics Shanghai Institute Of Technical Physics Chinese Academy Of
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Aoyama Mitsuru
Research Institute Of Electronics Shizuoka University
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Yamaguchi Tomuo
Research Institute Of Electronics Shizuoka University
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Kan Hirofumi
Central Research Institute, Hamamatsu Photonics K. K., 5000 Hirokuchi, Hamakita 434-8601, Japan
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Yamaguchi Tomuo
Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu 432-8011, Japan
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Dai Ning
National Laboratory For Infrared Physics, ShangHai Institute of Technical Physics, Chinese Academy of Science, 420 Zhong Shan Bei Yi Road, ShangHai 200083, China
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Aoyama Mitsuru
Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Hamamatsu 432-8011, Japan
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Gao Yu
National Laboratory For Infrared Physics, ShangHai Institute of Technical Physics, Chinese Academy of Science, 420 Zhong Shan Bei Yi Road, ShangHai 200083, China
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Gong Xiu
National Laboratory For Infrared Physics, ShangHai Institute of Technical Physics, Chinese Academy of Science, 420 Zhong Shan Bei Yi Road, ShangHai 200083, China
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