Characterization of Interface Layer of Silicon on Sapphire Using Spectroscopic Ellipsometry
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概要
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Epitaxial silicon on sapphire (SOS) grown using a commercial process was characterized by means of spectroscopic ellipsometry (SE). The SE data of a thin Si layer of SOS were analyzed based on the air/SiO2/Si/Al2O3 structure, in which the Si layer was analyzed using the established optical properties of bulk-Si and model dielectric functions (MDFs) of Si, and also with two layers, the bottom layer with MDFs and the top layer with bulk-Si. The best fit of the SE data with two layers shows that the optical properties of the Si layer in the early stage of growth are different from those of bulk-Si due to the effect of lattice mismatch between Al2O3 and Si. The thickness of the interface layer estimated from SE data analysis is around 20 nm, in reasonable agreement with the previous reports.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-12-15
著者
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Aoyama Mitsuru
Research Institute Of Electronics Shizuoka University
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Yamaguchi Tomuo
Research Institute Of Electronics Shizuoka University
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Jayatissa Ahalapitiya
Research Institute Of Electronics Shizuoka University
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Sawada Kazuaki
Research Institute Of Electronics Shizuoka University
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Sato Fumio
Image Devices Research Division Nhk Science And Technical Research Laboratory
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Sawada Kazuaki
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432, Japan
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