Optical Properties of InAsSb Single Crystals with Cutoff Wavelengths of 8–12 μm Grown by Melt-Epitaxy
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概要
- 論文の詳細を見る
The transmittance spectra of melt epitaxiy (ME)-grown InAsSb single crystals with cutoff wavelengths of 8–12 μm were measured and calculated under the assumption of a microscopic composition distribution function. A good agreement between the experimental and theoretical transmittance spectra was obtained. The results indicate that a microscopic composition distribution inhomogeneity exists in long-wavelength InAsSb epilayers with different compositions, which may be related to the energy band gap narrowing of this InAsSb.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
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GONG Xiu
Institute of Semiconductor and Information Technology, College of Electronics and Information Engine
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Gao Yu
Institute Of Semiconductor And Information Technology College Of Electronics And Information Enginee
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Yamaguchi Tomuo
Research Institute Of Electronics Shizuoka University
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Gao Yu
Institute of Semiconductor and Information Technology, College of Electronics and Information Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, China
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Gong Xiu
Institute of Semiconductor and Information Technology, College of Electronics and Information Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, China
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