Characterization of p-Type Silicon Field Emitters
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概要
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The saturation current phenomenon of a p-type silicon field emitter is reported and the mechanism of this phenomenon is proposed. The current-voltage characteristics of these field emitters using n-type silicon follow the Fowler-Nordheim relationship. However, the emission current of the emitters using p-type silicon is saturated in a high field region, because maximum emission electrons are restricted by the electron gerreration rate at the surface. The saturation current is observed on the emitters with HF treatment, but it not without HF treatment. These results indicate that the saturation current depends on the surface state density.
- 社団法人応用物理学会の論文
- 1994-09-15
著者
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Sawada Kazuaki
Research Institute Of Electronics Shizuoka University
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Ji K
Research Institute Of Electronics Shizuoka University
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Ando Takao
Research Institute Of Electronics Shizuoka University
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Jl Kun
Research Institute of Electronics, Shizuoka University
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