Characterization and Fabrication of Crater-Shaped Silicon Field Emitters
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概要
- 論文の詳細を見る
Silicon field emitter arrays with crater-shaped structure applicable to imaging devices were proposed. The emission current from crater-shaped emitters is larger than that from cone-shaped emitters whose sizes and curvature are the same as those of crater-shaped emitters. To estimate the ability to emit electrons, a method using the saturation phenomenon of an emission current of a p-type silicon field emitter was proposed. It was found that the crater-shaped silicon field emitter is expected to emit 70 times higher current than that from the cone-shaped emitter at the same electric field on the tip of the emitter.
- 社団法人応用物理学会の論文
- 1994-07-15
著者
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SAWADA Kazuaki
Research Institute of Electronics, Shizuoka University
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ANDO Takao
Research Institute of Electronics, Shizuoka University
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Sawada Kazuaki
Research Institute Of Electronics Shizuoka University
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JI Kun
Research Institute of Electronics, Shizuoka University
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Ji Kun
Research Institute Of Electronics Shizuoka University
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Ando Takao
Research Institute Of Electronics Shizuoka University
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