Fabrication of the Si/Al_2O_3/SiO_2/Si Structure Using O_2 Annealed Al_2O_3/Si Structure

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概要

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• The formation of a SiO_2 layer in the interface between epitaxial Al_2O_3(100)and a Si(100)substrate, in order to improve the insulation, was studied using O_2 annealing at 1000℃, and the Al_2O_3(100)/SiO_2/Si(100)structure was proposed as a Si-on-insulator(SOI)substrate. The breakdown voltage property of Al_2O_3/SiO_2/Si, rather than that of the Al_2O_3/Si structure, was improved from 8 V to 50 V. Moreover, Si(100)growth on the Al_2O_3/SiO_2/Si structure was carried out, and the morphology of the Si top layer was very smooth. Metal-oxide-semiconductor field effect transistors(MOSFETs)on the substrates show excellent electrical properties, which indicates the high crystallinity of SOI.

• 社団法人応用物理学会の論文
• 2000-04-30

著者

• Hori H

  Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn

• Hori H

  School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)

• Ishida Makoto

  Department Of Applied Chemistry & Biochemistry Faculty Of Engineering Kumamoto University

• Sawada Kazuaki

  Department Of Electrical And Electronic Engineering Toyohashi University Of Technology

• Sawada Kazuaki

  Research Institute Of Electronics Shizuoka University

• Kondo Fumitaka

  Department Of Electrical And Electonic Engineering Toyohashi University Of Technology

• HORI Hirotsugu

  Department of Electrical and Electonic Engineering, Toyohashi University of Technology

• AKAI Daisuke

  Department of Electrical and Electonic Engineering, Toyohashi University of Technology

• Akai Daisuke

  Department Of Electrical And Electonic Engineering Toyohashi University Of Technology

• Sawada Kazuaki

  Department of Electric and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan

• Sawada Kazuaki

  Department of Electric and Electronic Engineering, Toyohashi University of Technology

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